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Title: High Thermopower in a Zn-Based 3D Semiconductive Metal–Organic Framework

Journal Article · · Journal of the American Chemical Society
DOI:https://doi.org/10.1021/jacs.0c09573· OSTI ID:1721770

Conductive metal–organic frameworks (c-MOFs) have drawn increasing attention for their outstanding performance in energy-related applications. However, the majority of reported c-MOFs are based on 2D structures. Synthetic strategies for 3D c-MOFs are under-explored, leaving unrealized functionality in both their structures and properties. Here in this paper we report a 3D c-MOF, namely Zn-HAB, designed through topological analysis. Comprising a nitrogen donor linker, hexaaminobenzene, and Zn(II) node, Zn-HAB was found to have microporosity with a band-gap of approximately 1.68 eV. The relatively large band-gap results in a modest conduc-tivity of 0.86 mS cm-1 and a high Seebeck coefficient of 200 μV K-1 at 300 K. The power factor of 3.44 nW m-1 K-2 constitutes the first report of the thermoelectric properties of an intrinsically conductive 3D MOF.

Research Organization:
Stanford Univ., CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Swedish Research Council (SRC); Camille and Henry Dreyfus Foundation; National Science Foundation (NSF)
Grant/Contract Number:
SC0016523; AC02-06CH11357
OSTI ID:
1721770
Alternate ID(s):
OSTI ID: 1840580
Journal Information:
Journal of the American Chemical Society, Vol. 142, Issue 49; ISSN 0002-7863
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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