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Title: Thermoelectric power of HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}}, HgBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}}, and (Hg,Tl)Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}}

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.46843· OSTI ID:172166
 [1];  [2]; ;  [1]
  1. Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045 (United States)
  2. Midwest Superconductivity, Inc., 1321 Wakarusa Dr., Lawrence, Kansas 66049 (United States)

The temperature dependence of the newly discovered thermoelectric power of the high temperature superconductors HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}}, HgBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}}, and (Hg,Tl)Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}} are reported. The as-sintered HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}}, HgBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}} materials appear under-doped with oxygen, resulting in a low hole concentration state and a high thermopower value. After the materials were annealed in O{sub 2}, the thermopower values decrease, indicating the increase in the concentration of charge carriers. When Hg is partially substituted with Tl, the as-sintered 1223 phase (Hg,Tl)Ba{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}} has a smaller thermopower than the undoped HgBa{sub 2}Ca{sub 2}Cu{sub 3}O{sub 8+{delta}} material, confirming that Tl substitution for Hg increases the initial hole carrier concentration. It is clear that the oxygen content, and hence the carrier concentration has a significantly large influence on the thermoelectric power. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Sponsoring Organization:
USDOE
OSTI ID:
172166
Report Number(s):
CONF-940830-; ISSN 0094-243X; TRN: 96:003256
Journal Information:
AIP Conference Proceedings, Vol. 316, Issue 1; Conference: 13. international conference on thermoelectrics, Kansas City, MO (United States), 30 Aug - 1 Sep 1994; Other Information: PBD: 10 Aug 1994
Country of Publication:
United States
Language:
English