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Title: Participation of hot electrons in oxygen adsorption and ethylene oxidation on metals

Abstract

This paper reports the results obtained in the course of generating hot electrons by a device that is easier to fabricate and has more stability to chemically active compounds that a metal-insulator-metal systems: a Shottky-barrier diode having planar contact between a metal and a donor-doped semiconductor. In order to elucidate the potential effect of the promotion of chemical transformation by hot electrons, two specimens of different barrier heights were used: one a silicon-gold contact, the second a gallium arsenide film coated with layers of silver and a InNi alloy (3% Ni). These contacts were used to measure the current-voltage curve, the peak intensities curves which were proportional to the quantities of oxygen, water and carbon dioxide employed, and the peak intensities proportional to the formation rates of ethylene oxidation products.

Authors:
; ;  [1]
  1. Russian Univ. of People`s Friendship, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
171928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Doklady Physical Chemistry; Journal Volume: 341; Journal Issue: 4-6; Other Information: PBD: Apr 1995; TN: Translated from Doklady Akademii Nauk; 341: No. 4, 779-780(1995)
Country of Publication:
United States
Language:
English
Subject:
40 CHEMISTRY; TAIL ELECTRONS; PARTICLE PRODUCTION; HYDROCARBONS; OXIDATION; ADSORPTION; CHEMISORPTION; CATALYSTS

Citation Formats

Maganyuk, A.P., Starkovskii, N.I., and Yurchuk, S.Y. Participation of hot electrons in oxygen adsorption and ethylene oxidation on metals. United States: N. p., 1995. Web.
Maganyuk, A.P., Starkovskii, N.I., & Yurchuk, S.Y. Participation of hot electrons in oxygen adsorption and ethylene oxidation on metals. United States.
Maganyuk, A.P., Starkovskii, N.I., and Yurchuk, S.Y. Sat . "Participation of hot electrons in oxygen adsorption and ethylene oxidation on metals". United States. doi:.
@article{osti_171928,
title = {Participation of hot electrons in oxygen adsorption and ethylene oxidation on metals},
author = {Maganyuk, A.P. and Starkovskii, N.I. and Yurchuk, S.Y.},
abstractNote = {This paper reports the results obtained in the course of generating hot electrons by a device that is easier to fabricate and has more stability to chemically active compounds that a metal-insulator-metal systems: a Shottky-barrier diode having planar contact between a metal and a donor-doped semiconductor. In order to elucidate the potential effect of the promotion of chemical transformation by hot electrons, two specimens of different barrier heights were used: one a silicon-gold contact, the second a gallium arsenide film coated with layers of silver and a InNi alloy (3% Ni). These contacts were used to measure the current-voltage curve, the peak intensities curves which were proportional to the quantities of oxygen, water and carbon dioxide employed, and the peak intensities proportional to the formation rates of ethylene oxidation products.},
doi = {},
journal = {Doklady Physical Chemistry},
number = 4-6,
volume = 341,
place = {United States},
year = {Sat Apr 01 00:00:00 EST 1995},
month = {Sat Apr 01 00:00:00 EST 1995}
}