Modeling Dopant Incorporation Pathways for APAM Device Fabrication: A First Principles study of Phosphine and Diborane on a Silicon (100) Surface.
Conference
·
OSTI ID:1700538
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000;
- OSTI ID:
- 1700538
- Report Number(s):
- SAND2019-13288D; 680974
- Conference Information:
- Proposed for presentation at the FAIR DEAL GC EAB 2 held November 4-5, 2019.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Diagnostic Fabrication: A look into front and back end-of-the-line fabrication of diagnostic devices to evaluate APAM process.
Multi-scale modeling of dopant arrays in silicon.
A multiscale model of the reaction pathway for p-type doping using diborane on Si(100)-2x1.
Conference
·
2019
·
OSTI ID:1700539
Multi-scale modeling of dopant arrays in silicon.
Conference
·
2018
·
OSTI ID:1498223
A multiscale model of the reaction pathway for p-type doping using diborane on Si(100)-2x1.
Conference
·
2020
·
OSTI ID:1829238