Investigating the effect of electric fields on lead halide perovskites by scanning tunneling microscopy

Wieghold, Sarah; Shirato, Nozomi; Rose, Volker; Nienhaus, Lea

doi:10.1063/5.0011735

Title: Investigating the effect of electric fields on lead halide perovskites by scanning tunneling microscopy

Journal Article · Mon Sep 28 00:00:00 EDT 2020 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0011735· OSTI ID:1671776

^[1]; Shirato, Nozomi ^[2]; Rose, Volker ^[2];

^[3]

Florida State Univ., Tallahassee, FL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Florida State Univ., Tallahassee, FL (United States)

Lead halide perovskites have emerged as promising absorber materials over the last decade to increase the efficiency of photovoltaics beyond its current limits. However, to further optimize the performance of perovskites, more detailed studies need to be performed which allow for the correlation of film morphology and local electronic properties at the nanoscale. In this paper, we present a scanning tunneling microscopy (STM) approach to probe the effect of an applied electric field of a methylammonium formamidinium lead triiodide perovskite thin film on the film response by current-voltage spectroscopy, current imaging tunneling spectroscopy, differential conductance mapping and X-ray absorption spectroscopy (XAS) by means of synchrotron X-ray STM (SX-STM). We find a strong correlation between the measurement conditions and the obtained current-voltage characteristics when imaging under opposite applied bias polarities. In particular, we find similarities to already observed poling effects for perovskites which result in either a positively or negatively charged interface due to ion and vacancy migration. Our results provide insight into the influence of measurement conditions such as bias polarity on the performance assessment of perovskite thin films by STM.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Florida State University

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1671776

Alternate ID(s):: OSTI ID: 1668883

Journal Information:: Journal of Applied Physics, Vol. 128, Issue 12; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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