Molecular beam epitaxy of the magnetic Kagome metal FeSn on LaAlO3 (111)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Materials with Kagome layers are expected to give rise to rich physics arising from band structures with topological properties, spin liquid behavior, and the formation of Skyrmions. Until now, most work on Kagome materials has been performed on bulk samples due to difficulties in thin film synthesis. Here, by using molecular beam epitaxy, layered Kagome-structured FeSn films are synthesized on the (111) oriented LaAlO3 substrate. Both in situ and ex situ characterizations indicate that these films are highly crystalline and c-axis oriented, with atomically smooth surfaces. The films grow as disconnected islands, with lateral dimensions on the micron meter scale. By patterning Pt electrodes using a focused electron beam, the longitudinal and transverse resistance of single islands have been measured in magnetic fields. Our work opens a pathway for exploring mesoscale transport properties in thin films of Kagome materials and related devices.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Energy Frontier Research Centers (EFRC) (United States). Center for the Advancement of Topological Semimetals (CATS)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1671751
- Alternate ID(s):
- OSTI ID: 1671848
- Journal Information:
- AIP Advances, Vol. 10, Issue 10; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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