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Title: Carrier recombination parameters in diamond after surface boron implantation and annealing

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [1];  [1];  [1];  [1];  [2];  [2]; ORCiD logo [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Vilnius Univ. (Lithuania)
  3. Belarusian State Univ., Minsk (Belarus)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1670559
Alternate Identifier(s):
OSTI ID: 1635300
Report Number(s):
LLNL-JRNL-805200
Journal ID: ISSN 0021-8979; 1007217
Grant/Contract Number:  
AC52-07NA27344; 17-ERD-050
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 127; Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics - Solid state physics

Citation Formats

Grivickas, P., Ščajev, P., Kazuchits, N., Mazanik, A., Korolik, O., Voss, L. F., Conway, A. M., Hall, D. L., Bora, M., Subačius, L., Bikbajevas, V., and Grivickas, V. Carrier recombination parameters in diamond after surface boron implantation and annealing. United States: N. p., 2020. Web. doi:10.1063/5.0004881.
Grivickas, P., Ščajev, P., Kazuchits, N., Mazanik, A., Korolik, O., Voss, L. F., Conway, A. M., Hall, D. L., Bora, M., Subačius, L., Bikbajevas, V., & Grivickas, V. Carrier recombination parameters in diamond after surface boron implantation and annealing. United States. doi:10.1063/5.0004881.
Grivickas, P., Ščajev, P., Kazuchits, N., Mazanik, A., Korolik, O., Voss, L. F., Conway, A. M., Hall, D. L., Bora, M., Subačius, L., Bikbajevas, V., and Grivickas, V. Sun . "Carrier recombination parameters in diamond after surface boron implantation and annealing". United States. doi:10.1063/5.0004881.
@article{osti_1670559,
title = {Carrier recombination parameters in diamond after surface boron implantation and annealing},
author = {Grivickas, P. and Ščajev, P. and Kazuchits, N. and Mazanik, A. and Korolik, O. and Voss, L. F. and Conway, A. M. and Hall, D. L. and Bora, M. and Subačius, L. and Bikbajevas, V. and Grivickas, V.},
abstractNote = {},
doi = {10.1063/5.0004881},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 24,
volume = 127,
place = {United States},
year = {2020},
month = {6}
}

Journal Article:
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