Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

Adkins, J. W.; Fina, I.; Sánchez, F.; Bakaul, S. R.; Abiade, J. T.

doi:10.1063/5.0015547

Title: Thermal evolution of ferroelectric behavior in epitaxial Hf_0.5Zr_0.5O₂

Journal Article · Mon Oct 05 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0015547· OSTI ID:1760016

Adkins, J. W. ^[1]; Fina, I. ^[2];

^[2];

^[3];

^[4]

Univ. of Illinois, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States); Lab. for Oxide Research and Education, Chicago, IL (United States)
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain)
Argonne National Lab. (ANL), Lemont, IL (United States)
Univ. of Illinois, Chicago, IL (United States); Lab. for Oxide Research and Education, Chicago, IL (United States)

In this paper, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf_0.5Zr_0.5O₂ thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); Ministry of Science and Innovation; European Regional Development Fund (FEDER); Generalitat de Catalunya

Grant/Contract Number:: AC02-06CH11357; NSF-DMR-1508220; RYC-2017-22531

OSTI ID:: 1760016

Alternate ID(s):: OSTI ID: 1670235

Journal Information:: Applied Physics Letters, Vol. 117, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (35)

Modifying the barriers for oxygen-vacancy migration in fluorite-structured CeO ₂ electrolytes through strain: a computer simulation study De Souza, Roger A.; Ramadan, Amr; Hörner, Stefanie Energy Environ. Sci., Vol. 5, Issue 1 https://doi.org/10.1039/C2EE02508F	journal	January 2012
Ferroelectric fatigue in perovskite oxides Warren, W. L.; Tuttle, B. A.; Dimos, D. Applied Physics Letters, Vol. 67, Issue 10 https://doi.org/10.1063/1.114515	journal	September 1995
Enhanced ferroelectricity in epitaxial Hf _0.5 Zr _0.5 O ₂ thin films integrated with Si(001) using SrTiO ₃ templates Lyu, J.; Fina, I.; Bachelet, R. Applied Physics Letters, Vol. 114, Issue 22 https://doi.org/10.1063/1.5096002	journal	June 2019
Thermally activated switching kinetics in second-order phase transition ferroelectrics Vopsaroiu, Marian; Blackburn, John; Cain, Markys G. Physical Review B, Vol. 82, Issue 2 https://doi.org/10.1103/PhysRevB.82.024109	journal	July 2010
Ferroelectric HfO ₂ -based materials for next-generation ferroelectric memories Fan, Zhen; Chen, Jingsheng; Wang, John Journal of Advanced Dielectrics, Vol. 06, Issue 02 https://doi.org/10.1142/S2010135X16300036	journal	June 2016
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide Starschich, S.; Menzel, S.; Böttger, U. Applied Physics Letters, Vol. 108, Issue 3 https://doi.org/10.1063/1.4940370	journal	January 2016
Controlled oxygen vacancy induced p -type conductivity in HfO ₂₋ _x thin films Hildebrandt, Erwin; Kurian, Jose; Müller, Mathis M. Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3637603	journal	September 2011
Theory of ferroelectrics Devonshire, A. F. Advances in Physics, Vol. 3, Issue 10 https://doi.org/10.1080/00018735400101173	journal	April 1954
Ferroelectric Zr _0.5 Hf _0.5 O ₂ thin films for nonvolatile memory applications Müller, J.; Böscke, T. S.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3636417	journal	September 2011
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide Schenk, Tony; Schroeder, Uwe; Pešić, Milan ACS Applied Materials & Interfaces, Vol. 6, Issue 22 https://doi.org/10.1021/am504837r	journal	October 2014
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition Huang, Fei; Chen, Xing; Liang, Xiao Physical Chemistry Chemical Physics, Vol. 19, Issue 5 https://doi.org/10.1039/C6CP07501K	journal	January 2017
Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors Hoffmann, Michael; Schroeder, Uwe; Künneth, Christopher Nano Energy, Vol. 18 https://doi.org/10.1016/j.nanoen.2015.10.005	journal	November 2015
Thermal Expansion of HfO ₂ and ZrO ₂ : Thermal Expansion Haggerty, Ryan P.; Sarin, Pankaj; Apostolov, Zlatomir D. Journal of the American Ceramic Society, Vol. 97, Issue 7 https://doi.org/10.1111/jace.12975	journal	May 2014
Stable ferroelectric properties of Hf _0.5 Zr _0.5 O ₂ thin films within a broad working temperature range Wang, Dao; Wang, Jiali; Li, Qiang Japanese Journal of Applied Physics, Vol. 58, Issue 9 https://doi.org/10.7567/1347-4065/ab3844	journal	August 2019
High polarization, endurance and retention in sub-5 nm Hf _0.5 Zr _0.5 O ₂ films Lyu, Jike; Song, Tingfeng; Fina, Ignasi Nanoscale, Vol. 12, Issue 20 https://doi.org/10.1039/D0NR02204G	journal	January 2020
Temperature dependent fatigue rates in thin-film ferroelectric capacitors Brennan, Ciaran J.; Parrella, Ronald D.; Larsen, Duane E. Ferroelectrics, Vol. 151, Issue 1 https://doi.org/10.1080/00150199408244720	journal	January 1994
Effect of Zr Content on the Wake-Up Effect in Hf _{1– x} Zr _x O ₂ Films Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin ACS Applied Materials & Interfaces, Vol. 8, Issue 24 https://doi.org/10.1021/acsami.6b03586	journal	June 2016
Physical Mechanisms behind the Field-Cycling Behavior of HfO ₂ -Based Ferroelectric Capacitors Pešić, Milan; Fengler, Franz Paul Gustav; Larcher, Luca Advanced Functional Materials, Vol. 26, Issue 25 https://doi.org/10.1002/adfm.201600590	journal	May 2016
High-temperature heat capacity and thermal expansion of ${SrTiO}_{3}$ and ${SrZrO}_{3}$ perovskites de Ligny, Dominique; Richet, Pascal Physical Review B, Vol. 53, Issue 6 https://doi.org/10.1103/PhysRevB.53.3013	journal	February 1996
Giant Negative Electrocaloric Effects of Hf _0.5 Zr _0.5 O ₂ Thin Films Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin Advanced Materials, Vol. 28, Issue 36 https://doi.org/10.1002/adma.201602787	journal	July 2016
Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films Zhou, Dayu; Guan, Yan; Vopson, Melvin M. Acta Materialia, Vol. 99 https://doi.org/10.1016/j.actamat.2015.07.035	journal	October 2015
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films Mueller, Stefan; Mueller, Johannes; Singh, Aarti Advanced Functional Materials, Vol. 22, Issue 11 https://doi.org/10.1002/adfm.201103119	journal	March 2012
Ferroelectricity in Gd-Doped HfO ₂ Thin Films Mueller, S.; Adelmann, C.; Singh, A. ECS Journal of Solid State Science and Technology, Vol. 1, Issue 6 https://doi.org/10.1149/2.002301jss	journal	January 2012
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO ₂ Thin Films Grimley, Everett D.; Schenk, Tony; Sang, Xiahan Advanced Electronic Materials, Vol. 2, Issue 9 https://doi.org/10.1002/aelm.201600173	journal	July 2016
Improved ionic conductivity in strained yttria-stabilized zirconia thin films Jiang, Jun; Hu, Xiaocao; Shen, Weida Applied Physics Letters, Vol. 102, Issue 14 https://doi.org/10.1063/1.4801649	journal	April 2013
Model of ferroelectric fatigue due to defect/domain interactions Brennan, Ciaran Ferroelectrics, Vol. 150, Issue 1 https://doi.org/10.1080/00150199308008705	journal	December 1993
Magnetism in hafnium dioxide Coey, J. M. D.; Venkatesan, M.; Stamenov, P. Physical Review B, Vol. 72, Issue 2 https://doi.org/10.1103/PhysRevB.72.024450	journal	July 2005
Ferroelectricity in hafnium oxide thin films Böscke, T. S.; Müller, J.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 10 https://doi.org/10.1063/1.3634052	journal	September 2011
Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO ₂ Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony Advanced Electronic Materials, Vol. 4, Issue 4 https://doi.org/10.1002/aelm.201700489	journal	March 2018
A comprehensive study on the structural evolution of HfO ₂ thin films doped with various dopants Park, M. H.; Schenk, T.; Fancher, C. M. Journal of Materials Chemistry C, Vol. 5, Issue 19 https://doi.org/10.1039/C7TC01200D	journal	January 2017
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep32931	journal	September 2016
Wake-Up in a Hf _0.5 Zr _0.5 O ₂ Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching Chouprik, Anastasia; Spiridonov, Maxim; Zarubin, Sergei ACS Applied Electronic Materials, Vol. 1, Issue 3 https://doi.org/10.1021/acsaelm.8b00046	journal	February 2019
Ferroelectricity in Simple Binary ZrO ₂ and HfO ₂ Müller, Johannes; Böscke, Tim S.; Schröder, Uwe Nano Letters, Vol. 12, Issue 8 https://doi.org/10.1021/nl302049k	journal	July 2012
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films Zhou, Dayu; Xu, Jin; Li, Qing Applied Physics Letters, Vol. 103, Issue 19 https://doi.org/10.1063/1.4829064	journal	November 2013
Rhombohedral LSMO films - a unique case of ferroelastic domain formation Farag, N.; Bobeth, M.; Pompe, W. physica status solidi (a), Vol. 202, Issue 4 https://doi.org/10.1002/pssa.200510006	journal	March 2005

Similar Records

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions

Journal Article · Thu Nov 14 00:00:00 EST 2019 · Advanced Electronic Materials · OSTI ID:1760016

Sulzbach, Milena Cervo; Estandía, Saúl; Long, Xiao; +7 more

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

Journal Article · Fri Nov 11 00:00:00 EST 2022 · Applied Physics Letters · OSTI ID:1760016

Jung, Yong Chan; Kim, Jin-Hyun; Hernandez-Arriaga, Heber; +12 more

Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf _0.5 Zr _0.5 O ₂ Thin Film Capacitors

Journal Article · Wed Apr 19 00:00:00 EDT 2023 · Advanced Electronic Materials · OSTI ID:1760016

Saini, Balreen; Huang, Fei; Choi, Yoon‐Young; +5 more

Related Subjects

36 MATERIALS SCIENCE
Ferroelectric materials
Cryogenics
Phase transitions
Epitaxy
Thin films

Title: Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

Citation Formats

References (35)

Similar Records

Related Subjects

Title: Thermal evolution of ferroelectric behavior in epitaxial Hf_0.5Zr_0.5O₂