X-ray back-diffraction: can we further increase the energy resolution by tuning the energy slightly below that of exact backscattering?

Honnicke, Marcelo Goncalves; Cusatis, Cesar; Conley, Raymond; Kakuno, Edson Massayuki; Kasman, Elina; Huang, XianRong; Bouet, Nathalie; Zhou, Juan; Cai, Yong; Marques, Joao Basso; Vicentin, Flavio Cesar

doi:10.1107/S1600576719012925

Title: X-ray back-diffraction: can we further increase the energy resolution by tuning the energy slightly below that of exact backscattering?

Journal Article · Sun Dec 01 00:00:00 EST 2019 · Journal of Applied Crystallography

DOI:https://doi.org/10.1107/S1600576719012925· OSTI ID:1661660

Honnicke, Marcelo Goncalves; Cusatis, Cesar; Conley, Raymond; Kakuno, Edson Massayuki; Kasman, Elina; Huang, XianRong; Bouet, Nathalie; Zhou, Juan; Cai, Yong; Marques, Joao Basso; Vicentin, Flavio Cesar

X-ray beams at energies tuned slightly below that of exact backscattering (extreme conditions, where X-ray back-diffraction is almost extinguished - called residual XBD) are better focused if the experiment is carried out at lower energies in order to avoid multiple-beam diffraction effects. Following previous work by the authors [Honnicke, Conley, Cusatis, Kakuno, Zhou, Bouet, Marques & Vicentin (2014). J. Appl. Cryst.47, 1658-1665], herein efforts are directed towards characterizing the residual XBD beam of an ultra-thin Si 220 crystal (UTSiXTAL) at similar to 3.2 keV. To achieve the residual XBD condition the UTSiXTAL was cooled from 310 to 273 K. The results indicate that under this extreme condition the energy resolution can be further improved. Issues with the energy resolution measurements due to incoming beam divergence and the ultra-thin crystal flatness are discussed.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: Argonne National Laboratory - Advanced Photon Source; USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC02-06CH11357

OSTI ID:: 1661660

Journal Information:: Journal of Applied Crystallography, Vol. 52, Issue Part: 6

Country of Publication:: United States

Language:: English

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