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Title: Growth and characterization of homoepitaxial β-Ga 2O 3 layers

Abstract

ß-Ga 2O 3 is a next-generation ultra-wide bandgap semiconductor (E g= 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial ß-Ga 2O 3 layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ~1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by J-V and C-V measurements, revealing an unintentional doping density of 4.3×10 16 cm -3 - 2×10 17 cm -3 in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the ß-Ga 2O 3 homoepitaxial layers used in power electronicmore » and other devices.« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1660127
Alternate Identifier(s):
OSTI ID: 1664630
Report Number(s):
NREL/JA-5K00-76395
Journal ID: ISSN 0022-3727; MainId:7161;UUID:ff0c581d-5869-ea11-9c31-ac162d87dfe5;MainAdminID:15157
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 53; Journal Issue: 48; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; wide bandgap semiconductor; molecular beam epitaxy; gallium oxide; X-ray diffraction; atomic force microscopy; Schottky diode

Citation Formats

Tellekamp, Marshall, Heinselman, Karen, Harvey, Steven, Khan, Imran, and Zakutayev, Andriy. Growth and characterization of homoepitaxial β-Ga2O3 layers. United States: N. p., 2020. Web. doi:10.1088/1361-6463/aba6b8.
Tellekamp, Marshall, Heinselman, Karen, Harvey, Steven, Khan, Imran, & Zakutayev, Andriy. Growth and characterization of homoepitaxial β-Ga2O3 layers. United States. doi:10.1088/1361-6463/aba6b8.
Tellekamp, Marshall, Heinselman, Karen, Harvey, Steven, Khan, Imran, and Zakutayev, Andriy. Wed . "Growth and characterization of homoepitaxial β-Ga2O3 layers". United States. doi:10.1088/1361-6463/aba6b8.
@article{osti_1660127,
title = {Growth and characterization of homoepitaxial β-Ga2O3 layers},
author = {Tellekamp, Marshall and Heinselman, Karen and Harvey, Steven and Khan, Imran and Zakutayev, Andriy},
abstractNote = {ß-Ga2O3 is a next-generation ultra-wide bandgap semiconductor (Eg= 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial ß-Ga2O3 layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ~1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by J-V and C-V measurements, revealing an unintentional doping density of 4.3×1016 cm-3 - 2×1017 cm-3 in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the ß-Ga2O3 homoepitaxial layers used in power electronic and other devices.},
doi = {10.1088/1361-6463/aba6b8},
journal = {Journal of Physics. D, Applied Physics},
issn = {0022-3727},
number = 48,
volume = 53,
place = {United States},
year = {2020},
month = {9}
}

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