Reducing electron energy dispersion of nonformed metal--insulator--metal electron emitters using the near-threshold drive method
- Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185 (Japan)
The energy distribution of electrons emitted from an Al/Al{sub 2}O{sub 3}/Au metal--insulator--metal (MIM) electron emitter is measured. The thickness of the insulator is 5.5 nm. The energy distribution becomes narrower as the operating voltage {ital V}{sub {ital d}} decreases since the low energy tail of the distribution is cut off by the potential barrier of the surface work function {phi} of the emitter. When the emitter is operated in the nonformed state, {Delta}{ital E}, the full width at half-maximum of the distribution, is 0.32 eV for {ital V}{sub {ital d}}=5.0 V, which is slightly above {phi} of Au (4.7 eV). As {ital V}{sub {ital d}} increases, the high-energy tail of the distribution broadens whereas the shape of the low-energy tail remains unchanged. For a formed MIM emitter, {Delta}{ital E} becomes broader by 0.15--0.2 eV more than {Delta}{ital E} of a nonformed emitter at each {ital V}{sub {ital d}}; thus, operation in the nonformed state is essential to obtain good monochromaticity. The spatial distribution of the work function in the emitter surface is also measured by the retarding potential method. The variation of {phi}, which limits the ultimately attainable monochromaticity with the near-threshold drive method, is measured as 0.05 eV. It is estimated that {Delta}{ital E} less than 0.2 eV could be attained by the near-threshold drive if the insulator thickness and {ital V}{sub {ital d}} are further reduced. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- OSTI ID:
- 165904
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 13, Issue 6; Other Information: PBD: Nov 1995
- Country of Publication:
- United States
- Language:
- English
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