Electrochemical behavior and separation of iodide in molten LiF-NaF-KF melt

Ge, Jianbang; Wang, Yafei; Chesser, Ryan; Zhang, Jinsuo

doi:10.1016/j.jnucmat.2020.152468

Title: Electrochemical behavior and separation of iodide in molten LiF-NaF-KF melt

Journal Article · Thu Aug 27 00:00:00 EDT 2020 · Journal of Nuclear Materials

DOI:https://doi.org/10.1016/j.jnucmat.2020.152468· OSTI ID:1850465

Ge, Jianbang ^[1]; Wang, Yafei ^[1]; Chesser, Ryan ^[1]; Zhang, Jinsuo ^[1]

Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Mechanical Engineering. Nuclear Engineering Program

This work studied the electrochemical behavior of iodide in molten LiF-NaF-KF mixture and the separation of iodide from the molten salt at 973 K using a graphite working electrode. The cyclic voltammetry (CV) and chronoamperometry (CA) measurements indicated an anodic passivation layer was formed on the graphite electrode in this melt and the layer blocked the charge transfer across the electrolyte/electrode interface. However, the added I- ions could pass through the passivation layer and were oxidized at the graphite electrode. The characterization of the obtained products proved that iodide ions was efficiently oxidized to I2 gas during electrolysis. Furthermore, the graphite anode showed excellent stability without any obvious change in dimensions after electrolysis, which showed the high current efficiency of I2 evolution reaction. Thus, the graphite electrode was possible to be served as an excellent anode to separate other anions (such as Br) from molten fluoride salts.

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Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NE0008306

OSTI ID:: 1850465

Alternate ID(s):: OSTI ID: 1657297

Journal Information:: Journal of Nuclear Materials, Vol. 542, Issue C; ISSN 0022-3115

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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