Distinguishing the gapped and Weyl semimetal scenario in ZrTe5: insights from an effective two-band model

Rukelj, Z.; Homes, C. C.; Orlita, M.; Akrap, Ana

doi:10.1103/PhysRevB.102.125201

Title: Distinguishing the gapped and Weyl semimetal scenario in ZrTe₅: insights from an effective two-band model

Journal Article · Thu Sep 10 00:00:00 EDT 2020 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.102.125201· OSTI ID:1657155

Rukelj, Z. ^[1];

^[2]; Orlita, M. ^[3];

^[4]

Univ. of Fribourg (Switzerland); Univ. of Zagreb (Croatia)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Paul Sabatier Univ., Grenoble (France). Lab. National des Champs Magnetiques Intenses (LNCMI), CNRS; Charles Univ. in Prague (Czech Republic)
Univ. of Fribourg (Switzerland)

In this work, we study the static and dynamic transport properties of a low-energy two-band model proposed previously in Martino et al. [PRL 122, 217402 (2019)], with an anisotropic in-plane linear momentum dependence and a parabolic out-of-plane dispersion. The model is extended to include a negative band gap, which leads to the emergence of a Weyl semimetal (WSM) state, as opposed to the gapped semimetal (GSM) state when the band gap is positive. Furthermore, we calculate and compare the zero- and finite-frequency transport properties of the GSM and WSM cases. The DC properties that are calculated for the GSM and WSM cases are Drude spectral weight, mobility, and resistivity. We determine their dependence on the Fermi energy and crystal direction. The in- and out-of-plane optical conductivities are calculated in the limit of the vanishing interband relaxation rate for both semimetals. The main common features are an ω^1/2 in-plane and ω^3/2 out-of-plane frequency dependence of the optical conductivity. We seek particular features related to the charge transport that could unambiguously point to one ground state over the other, based on the comparison with the experiment. Differences between the WSM and GSM are in principle possible only at extremely low carrier concentrations and at low temperatures.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF)

Grant/Contract Number:: SC0012704; PP00P2170544

OSTI ID:: 1657155

Report Number(s):: BNL-216326-2020-JAAM; TRN: US2203234

Journal Information:: Physical Review B, Vol. 102, Issue 12; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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