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Title: Strain modulation using defects in two-dimensional MoS 2

Abstract

We investigate the nature of strain in MoS 2 and correlate it to defect types and densities, while systematically assessing the tolerance of this low dimensional material to He and Au ion irradiations. Through a series of theoretical predictions and experimental observations, we establish the onset of the crystalline-to-amorphous transition in MoS 2 and identify sulfur vacancies as the most favorable defects introduced during irradiation. We note the presence of both tensile and compressive strains, which depend on the types of defects introduced into the lattice and vary with increasing fluence. In conclusion, the results show that defects can be used to tune strain in two-dimensional materials and provide an exciting pathway for using external stimuli to control properties of low dimensional materials.

Authors:
 [1]; ORCiD logo [1];  [1];  [2];  [2];  [2];  [1]; ORCiD logo [1]
  1. University of Florida, Gainesville, FL (United States)
  2. Texas A & M University, College Station, TX (United States)
Publication Date:
Research Org.:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1656833
Grant/Contract Number:  
SC0019014
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 102; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Atom impact & scattering; Chemical bonding; Composition; Defects; Ion impact & scattering; Irradiation effects; Jahn-Teller effect; Microstructure; Surface & interfacial phenomena; 2-dimensional systems; Transition-metal dichalcogenide

Citation Formats

Burns, Kory, Tan, Anne Marie Z., Gordon, Horace, Wang, Tianyao, Gabriel, Adam, Shao, Lin, Hennig, Richard G., and Aitkaliyeva, Assel. Strain modulation using defects in two-dimensional MoS2. United States: N. p., 2020. Web. doi:10.1103/physrevb.102.085421.
Burns, Kory, Tan, Anne Marie Z., Gordon, Horace, Wang, Tianyao, Gabriel, Adam, Shao, Lin, Hennig, Richard G., & Aitkaliyeva, Assel. Strain modulation using defects in two-dimensional MoS2. United States. doi:10.1103/physrevb.102.085421.
Burns, Kory, Tan, Anne Marie Z., Gordon, Horace, Wang, Tianyao, Gabriel, Adam, Shao, Lin, Hennig, Richard G., and Aitkaliyeva, Assel. Fri . "Strain modulation using defects in two-dimensional MoS2". United States. doi:10.1103/physrevb.102.085421.
@article{osti_1656833,
title = {Strain modulation using defects in two-dimensional MoS2},
author = {Burns, Kory and Tan, Anne Marie Z. and Gordon, Horace and Wang, Tianyao and Gabriel, Adam and Shao, Lin and Hennig, Richard G. and Aitkaliyeva, Assel},
abstractNote = {We investigate the nature of strain in MoS2 and correlate it to defect types and densities, while systematically assessing the tolerance of this low dimensional material to He and Au ion irradiations. Through a series of theoretical predictions and experimental observations, we establish the onset of the crystalline-to-amorphous transition in MoS2 and identify sulfur vacancies as the most favorable defects introduced during irradiation. We note the presence of both tensile and compressive strains, which depend on the types of defects introduced into the lattice and vary with increasing fluence. In conclusion, the results show that defects can be used to tune strain in two-dimensional materials and provide an exciting pathway for using external stimuli to control properties of low dimensional materials.},
doi = {10.1103/physrevb.102.085421},
journal = {Physical Review B},
issn = {2469-9950},
number = 8,
volume = 102,
place = {United States},
year = {2020},
month = {8}
}

Journal Article:
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