Thermoelectric properties of undoped polycrystal (Bi{sub 2}Te{sub 3}){sub 0.2}(Sb{sub 2}Te{sub 3}){sub 0.8} by PIES method
- Electrotechnical Laboratory, AIST, MITI, Tsukuba, Ibaraki 305 (Japan)
The PIES method (Pulverized and Intermixed Elements Sintering method) has been investigated as a new preparation technique for bismuth telluride based materials, silicon germanium based materials and so on. It has a number of advantages over the melt technique, for example, low energy inventory for preparation, low cost and short processing period, a potential for reducing grain size which favors a reduction in the thermal conductivity and an enhancement in the mechanical strength, however, the precise comparison of properties in between PIES material and the best single crystal one has not been performed. The room temperature figure of merit of the best single crystal (Bi{sub 2}Te{sub 3}){sub 0.2}(Sb{sub 2}Te{sub 3}){sub 0.8} were 2.0{similar_to}2.9{times}10{sup {minus}3} K{sup {minus}1} respectively depending on the saturation temperature and the anisotropic characteristics. On the contrary, that of PIES sample with the same composition were 2.75{times}10{sup {minus}3} K{sup {minus}1}. The figure of merit value of PIES samples were near those of the best single crystal one. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165426
- Report Number(s):
- CONF-940830-; ISSN 0094-243X; TRN: 96:002102
- Journal Information:
- AIP Conference Proceedings, Vol. 316, Issue 1; Conference: 13. international conference on thermoelectrics, Kansas City, MO (United States), 30 Aug - 1 Sep 1994; Other Information: PBD: 10 Aug 1994
- Country of Publication:
- United States
- Language:
- English
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