skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics

Abstract

Whatever the methods for preparation of thin film thermoelectrics, a subsequent annealing is inevitable to reduce defects and residual stresses introduced during the fabrication processes and also to control the uniform carrier concentration of the film. The diffusion-induced atomic redistribution and broadening of {ital p}/{ital n} junction region are expected to affect thermoelectric properties of thin film modules thereafter. In the present studies, it has been intended to investigate the diffusion at {ital p}/{ital n} junctions of thermoelectric thin films and to relate it with the property changes. For this, thermoelectric thin film junctions were prepared by the flash evaporation technique. {ital P}- and {ital n}-type materials used were Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and Bi{sub 2}Te{sub 2.4}Se{sub 0.6}, respectively. Aluminum thin layer employed as a diffusion barrier between {ital p}- and {ital n}-type films of the junction was found to be an effective barrier by showing a negligible diffusion into both type films. Thermoelectric properties of {ital p}/{ital n} couples incorporated with aluminum barrier layer were accordingly retained without any deterioration, when compared with the ``virgin`` junctions. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Authors:
;  [1]
  1. Department of Metallurgical Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
165425
Report Number(s):
CONF-940830-
Journal ID: APCPCS; ISSN 0094-243X; TRN: 96:002100
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 316; Journal Issue: 1; Conference: 13. international conference on thermoelectrics, Kansas City, MO (United States), 30 Aug - 1 Sep 1994; Other Information: PBD: 10 Aug 1994
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; THERMOELECTRIC MATERIALS; DIFFUSION; THIN FILMS; P-N JUNCTIONS; THERMOELECTRIC PROPERTIES; BISMUTH TELLURIDES; BISMUTH SELENIDES; ANTIMONY ALLOYS; FABRICATION; X-RAY SPECTROSCOPY; ELECTRON MICROSCOPY; FORMATION FREE ENERGY; HEAT TREATMENTS

Citation Formats

Kim, I, and Lee, D. Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics. United States: N. p., 1994. Web. doi:10.1063/1.46811.
Kim, I, & Lee, D. Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics. United States. doi:10.1063/1.46811.
Kim, I, and Lee, D. Wed . "Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics". United States. doi:10.1063/1.46811.
@article{osti_165425,
title = {Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics},
author = {Kim, I and Lee, D},
abstractNote = {Whatever the methods for preparation of thin film thermoelectrics, a subsequent annealing is inevitable to reduce defects and residual stresses introduced during the fabrication processes and also to control the uniform carrier concentration of the film. The diffusion-induced atomic redistribution and broadening of {ital p}/{ital n} junction region are expected to affect thermoelectric properties of thin film modules thereafter. In the present studies, it has been intended to investigate the diffusion at {ital p}/{ital n} junctions of thermoelectric thin films and to relate it with the property changes. For this, thermoelectric thin film junctions were prepared by the flash evaporation technique. {ital P}- and {ital n}-type materials used were Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and Bi{sub 2}Te{sub 2.4}Se{sub 0.6}, respectively. Aluminum thin layer employed as a diffusion barrier between {ital p}- and {ital n}-type films of the junction was found to be an effective barrier by showing a negligible diffusion into both type films. Thermoelectric properties of {ital p}/{ital n} couples incorporated with aluminum barrier layer were accordingly retained without any deterioration, when compared with the ``virgin`` junctions. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.},
doi = {10.1063/1.46811},
journal = {AIP Conference Proceedings},
number = 1,
volume = 316,
place = {United States},
year = {1994},
month = {8}
}