Diffusion at {ital p}/{ital n} junctions of thin film Bi{sub 0.5}Sb{sub 1.5}Te{sub 3}/Bi{sub 2}Te{sub 2.4}Se{sub 0.6} thermoelectrics
- Department of Metallurgical Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of)
Whatever the methods for preparation of thin film thermoelectrics, a subsequent annealing is inevitable to reduce defects and residual stresses introduced during the fabrication processes and also to control the uniform carrier concentration of the film. The diffusion-induced atomic redistribution and broadening of {ital p}/{ital n} junction region are expected to affect thermoelectric properties of thin film modules thereafter. In the present studies, it has been intended to investigate the diffusion at {ital p}/{ital n} junctions of thermoelectric thin films and to relate it with the property changes. For this, thermoelectric thin film junctions were prepared by the flash evaporation technique. {ital P}- and {ital n}-type materials used were Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} and Bi{sub 2}Te{sub 2.4}Se{sub 0.6}, respectively. Aluminum thin layer employed as a diffusion barrier between {ital p}- and {ital n}-type films of the junction was found to be an effective barrier by showing a negligible diffusion into both type films. Thermoelectric properties of {ital p}/{ital n} couples incorporated with aluminum barrier layer were accordingly retained without any deterioration, when compared with the ``virgin`` junctions. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165425
- Report Number(s):
- CONF-940830-; ISSN 0094-243X; TRN: 96:002100
- Journal Information:
- AIP Conference Proceedings, Vol. 316, Issue 1; Conference: 13. international conference on thermoelectrics, Kansas City, MO (United States), 30 Aug - 1 Sep 1994; Other Information: PBD: 10 Aug 1994
- Country of Publication:
- United States
- Language:
- English
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