Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
- Research Organization:
- Leading Edge Crystal Technologies, Inc., Gloucester, MA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0000595
- Assignee:
- Leading Edge Crystal Technologies, Inc. (Gloucester, MA)
- Patent Number(s):
- 10,662,548
- Application Number:
- 15/923,360
- OSTI ID:
- 1650942
- Resource Relation:
- Patent File Date: 03/16/2018
- Country of Publication:
- United States
- Language:
- English
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