Method for forming perovskite layers using atmospheric pressure plasma
Patent
·
OSTI ID:1650830
Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0004946
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA)
- Patent Number(s):
- 10,636,632
- Application Number:
- 15/874,527
- OSTI ID:
- 1650830
- Resource Relation:
- Patent File Date: 01/18/2018
- Country of Publication:
- United States
- Language:
- English
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