Method and system for preparing polycrystalline group III metal nitride
Patent
·
OSTI ID:1650763
A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
- Research Organization:
- SLT Technologies, Inc., Los Angeles, CA (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AR0000020
- Assignee:
- SLT Technologies, Inc. (Los Angeles, CA)
- Patent Number(s):
- 10,619,239
- Application Number:
- 16/023,137
- OSTI ID:
- 1650763
- Country of Publication:
- United States
- Language:
- English
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