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Title: Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems

Abstract

Spectral emissivity control is paramount for designing a high-efficiency selective emitter surface required for thermophotovoltaic (TPV) applications. Owing to the temperature dependency of materials optical constants, the spectral properties of a selective emitter surface changes with the emitter temperature. This paper presents the fabrication of a multilayer metal-dielectric ($${\rm Si}_{3}{\rm N}_{4}/\rm W/Si_{3}{\rm N_{4}}$$) coated tungsten selective emitter aimed for GaSb-based TPV systems and studies the dependence of its surface spectral emissivity, $$\varepsilon (\lambda)$$, upon a temperature ranging from 300 K to 1500 K. Both the simulation and experimental methods were used to characterize $$\varepsilon (\lambda)$$ as a function of temperature. For wavelengths less than 1.4 µm, $$\varepsilon (\lambda)$$ was found to have a minimal dependence on temperature. Beyond 1.4 µm, $$\varepsilon (\lambda)$$ increases with the temperature. At 1.55 µm, the simulation and experimental data estimated a $${\sim}{{4}}\%$$ greater emissivity at 1500 K than at room temperature. At 1500 K, the increased $$\varepsilon (\lambda)$$ at longer wavelengths lowered the spectral conversion efficiency of the selective emitter from 58% to 47%. The output power density, sub-bandgap loss, and TPV conversion efficiency ($${\eta _{\rm TPV}}$$) for a GaSb cell illuminated by the selective thermal emitter at 1500 K were estimated. $${\eta _{\rm TPV}}$$more » drops from 13.7% to 11% due to the increased sub-bandgap emission at 1500 K. Essential approaches for mitigating the sub-bandgap losses to further improve $${\eta _{\rm TPV}}$$ are also discussed.« less

Authors:
 [1]; ORCiD logo [2];  [3]
  1. Univ. of Virginia, Charlottesville, VA (United States); Science Systems and Applications Inc., Hampton, VA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Univ. of Virginia, Charlottesville, VA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1649239
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Optics
Additional Journal Information:
Journal Volume: 59; Journal Issue: 18; Journal ID: ISSN 1559-128X
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; High power diode lasers; optical constants; optical properties; photonic crystals; solar energy; spectral properties

Citation Formats

Bhatt, Rajendra, Kravchenko, Ivan, and Gupta, Mool. Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems. United States: N. p., 2020. Web. doi:10.1364/ao.394326.
Bhatt, Rajendra, Kravchenko, Ivan, & Gupta, Mool. Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems. United States. https://doi.org/10.1364/ao.394326
Bhatt, Rajendra, Kravchenko, Ivan, and Gupta, Mool. Mon . "Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems". United States. https://doi.org/10.1364/ao.394326.
@article{osti_1649239,
title = {Consideration of temperature-dependent emissivity of selective emitters in thermophotovoltaic systems},
author = {Bhatt, Rajendra and Kravchenko, Ivan and Gupta, Mool},
abstractNote = {Spectral emissivity control is paramount for designing a high-efficiency selective emitter surface required for thermophotovoltaic (TPV) applications. Owing to the temperature dependency of materials optical constants, the spectral properties of a selective emitter surface changes with the emitter temperature. This paper presents the fabrication of a multilayer metal-dielectric (${\rm Si}_{3}{\rm N}_{4}/\rm W/Si_{3}{\rm N_{4}}$) coated tungsten selective emitter aimed for GaSb-based TPV systems and studies the dependence of its surface spectral emissivity, $\varepsilon (\lambda)$, upon a temperature ranging from 300 K to 1500 K. Both the simulation and experimental methods were used to characterize $\varepsilon (\lambda)$ as a function of temperature. For wavelengths less than 1.4 µm, $\varepsilon (\lambda)$ was found to have a minimal dependence on temperature. Beyond 1.4 µm, $\varepsilon (\lambda)$ increases with the temperature. At 1.55 µm, the simulation and experimental data estimated a ${\sim}{{4}}\%$ greater emissivity at 1500 K than at room temperature. At 1500 K, the increased $\varepsilon (\lambda)$ at longer wavelengths lowered the spectral conversion efficiency of the selective emitter from 58% to 47%. The output power density, sub-bandgap loss, and TPV conversion efficiency (${\eta _{\rm TPV}}$) for a GaSb cell illuminated by the selective thermal emitter at 1500 K were estimated. ${\eta _{\rm TPV}}$ drops from 13.7% to 11% due to the increased sub-bandgap emission at 1500 K. Essential approaches for mitigating the sub-bandgap losses to further improve ${\eta _{\rm TPV}}$ are also discussed.},
doi = {10.1364/ao.394326},
url = {https://www.osti.gov/biblio/1649239}, journal = {Applied Optics},
issn = {1559-128X},
number = 18,
volume = 59,
place = {United States},
year = {2020},
month = {6}
}

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