Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

Li, Xufan; Kahn, Ethan; Chen, Gugang; Sang, Xiahan; Lei, Jincheng; Passarello, Donata; Oyedele, Akinola D.; Zakhidov, Dante; Chen, Kai-Wen; Chen, Yu-Xun; Hsieh, Shang-Hsien; Fujisawa, Kazunori; Unocic, Raymond R.; Xiao, Kai; Salleo, Alberto; Toney, Michael F.; Chen, Chia-Hao; Kaxiras, Efthimios; Terrones, Mauricio; Yakobson, Boris I.; Harutyunyan, Avetik R.

doi:10.1021/acsnano.0c00132

Title: Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

Journal Article · Mon Apr 27 00:00:00 EDT 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c00132· OSTI ID:1647238

^[1]; Kahn, Ethan ^[2];

^[1]; Sang, Xiahan ^[3]; Lei, Jincheng ^[4]; Passarello, Donata ^[5]; Oyedele, Akinola D. ^[3];

^[6]; Chen, Kai-Wen ^[7]; Chen, Yu-Xun ^[7]; Hsieh, Shang-Hsien ^[7]; Fujisawa, Kazunori ^[8];

^[3];

^[3]; Salleo, Alberto ^[6];

^[5];

^[7]; Kaxiras, Efthimios ^[9];

^[8]; Yakobson, Boris I. ^[4] more »

Honda Research Institute USA Inc., San Jose, CA (United States)
Honda Research Institute USA Inc., San Jose, CA (United States); Pennsylvania State University, University Park, PA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Rice Univ., Houston, TX (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States)
National Synchrotron Radiation Research Center (NSRRC), Hsinchu (Taiwan)
Pennsylvania State University, University Park, PA (United States)
Harvard Univ., Cambridge, MA (United States)

The role of additives in facilitating the growth of conventional semiconducting thin films is well-estabThe role of additives in facilitating the growth of conventional semiconducting thin films is well-established. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. In conclusion, the surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.lished. Apparently, their presence is also decisive in the growth of two-dimensional transition metal dichalcogenides (TMDs), yet their role remains ambiguous. In this work, we show that the use of sodium bromide enables synthesis of TMD monolayers via a surfactant-mediated growth mechanism, without introducing liquefaction of metal oxide precursors. We discovered that sodium ions provided by sodium bromide chemically passivate edges of growing molybdenum disulfide crystals, relaxing in-plane strains to suppress 3D islanding and promote monolayer growth. To exploit this growth model, molybdenum disulfide monolayers were directly grown into desired patterns using predeposited sodium bromide as a removable template. The surfactant-mediated growth not only extends the families of metal oxide precursors but also offers a way for lithography-free patterning of TMD monolayers on various surfaces to facilitate fabrication of atomically thin electronic devices.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation Graduate Research Fellowship

Grant/Contract Number:: AC02-76SF00515; W911NF-14-0247; DGE1656518; DMR- 1231319; AC05-00OR22725

OSTI ID:: 1647238

Alternate ID(s):: OSTI ID: 1657899

Journal Information:: ACS Nano, Vol. 14, Issue 6; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
surfactant
MoS2
edge passivation
strain
lithography-free patterning

Title: Surfactant-Mediated Growth and Patterning of Atomically Thin Transition Metal Dichalcogenides

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