Berry curvature memory through electrically driven stacking transitions

Xiao, Jun; Wang, Ying; Wang, Hua; Pemmaraju, C. D.; Wang, Siqi; Muscher, Philipp; Sie, Edbert J.; Nyby, Clara M.; Devereaux, Thomas P.; Qian, Xiaofeng; Zhang, Xiang; Lindenberg, Aaron M.

doi:10.1038/s41567-020-0947-0

Title: Berry curvature memory through electrically driven stacking transitions

Journal Article · Mon Jun 29 00:00:00 EDT 2020 · Nature Physics

DOI:https://doi.org/10.1038/s41567-020-0947-0· OSTI ID:1634834

^[1]; Wang, Ying ^[2]; Wang, Hua ^[3];

^[4]; Wang, Siqi ^[2]; Muscher, Philipp ^[5];

^[6]; Nyby, Clara M. ^[5];

^[6]; Qian, Xiaofeng ^[3];

^[7];

^[8]

Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Univ. of California, Berkeley, CA (United States). National Science Foundation (NSF) Nanoscale Science and Engineering Center
Texas A & M Univ., College Station, TX (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Stanford Univ., CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States)
Univ. of California, Berkeley, CA (United States). National Science Foundation (NSF) Nanoscale Science and Engineering Center; Univ. of Hong Kong (China)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE)

In two-dimensional layered quantum materials, the interlayer stacking order determines both crystalline symmetry and quantum electronic properties such as Berry curvature, topology and electron correlation. Electrical stimuli can strongly influence quasi-particle interactions and the free energy landscape, thus making it possible to access hidden stacking orders with novel quantum properties and enabling dynamic engineering of these attributes. In this paper, we demonstrate electrically driven stacking transitions and a new type of nonvolatile memory based on Berry curvature in few-layer WTe₂. The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In-situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature only occurs in odd layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low energy cost, electrically-controlled topological memory in the atomically thin limit.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); King Abdullah University of Science and Technology (KAUST)

Grant/Contract Number:: AC02-76SF00515; AC02-05CH11231; DGE-114747; DMR-1753054; OSR-2016-CRG5-2996; ECCS-1542152

OSTI ID:: 1634834

Alternate ID(s):: OSTI ID: 1647097; OSTI ID: 1660943

Journal Information:: Nature Physics, Vol. 16; ISSN 1745-2473

Publisher:: Nature Publishing Group (NPG)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 63 works

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