Sequential infiltration synthesis for enhancing multiple-patterning lithography

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Sequential infiltration synthesis for enhancing multiple-patterning lithography

Patent · 24 February 2020

OSTI ID:1632615

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Number(s):: 10,571,803

Application Number:: 15/620,318

OSTI ID:: 1632615

Country of Publication:: United States

Language:: English

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Sequential infiltration synthesis for enhancing multiple-patterning lithography

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