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Title: SOFC interconnect barriers and methods of making same using masks

Abstract

A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.

Inventors:
;
Publication Date:
Research Org.:
Sonata Scientific LLC, Bethel, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1632480
Patent Number(s):
10,541,429
Application Number:
15/790,023
Assignee:
Sonata Scientific LLC (Bethel, CT)
DOE Contract Number:  
SC0011274
Resource Type:
Patent
Resource Relation:
Patent File Date: 10/22/2017
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Roeder, Jeffrey F., and Van Buskirk, Peter C.. SOFC interconnect barriers and methods of making same using masks. United States: N. p., 2020. Web.
Roeder, Jeffrey F., & Van Buskirk, Peter C.. SOFC interconnect barriers and methods of making same using masks. United States.
Roeder, Jeffrey F., and Van Buskirk, Peter C.. Tue . "SOFC interconnect barriers and methods of making same using masks". United States. https://www.osti.gov/servlets/purl/1632480.
@article{osti_1632480,
title = {SOFC interconnect barriers and methods of making same using masks},
author = {Roeder, Jeffrey F. and Van Buskirk, Peter C.},
abstractNote = {A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.},
doi = {},
url = {https://www.osti.gov/biblio/1632480}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {1}
}

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