Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

doi:10.1038/srep03598

Title: Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

Journal Article · Wed Jan 08 00:00:00 EST 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep03598· OSTI ID:1624678

Tian, He ^[1]; Yang, Yi ^[2]; Xie, Dan ^[2]; Cui, Ya-Long ^[2]; Mi, Wen-Tian ^[2]; Zhang, Yuegang ^[3]; Ren, Tian-Ling ^[2]

Tsinghua Univ., Beijing (China). Inst. of Microelectronics; Tsinghua Univ., Beijing (China). Tsinghua National Laboratory for Information Science and Technology (TNList)
Tsinghua Univ., Beijing (China). Inst. of Microelectronics; Tsinghua Univ., Beijing (China). Tsinghua National Laboratory for Information Science and Technology (TNList)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry; Chinese Academy of Sciences (CAS), Suzhou (China). Suzhou Inst. of Nano-Tech and Nano-Bionics

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1624678

Journal Information:: Scientific Reports, Vol. 4, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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