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Title: Origin of band gaps in graphene on hexagonal boron nitride

Journal Article · · Nature Communications
DOI:https://doi.org/10.1038/ncomms7308· OSTI ID:1623965
ORCiD logo [1];  [2];  [3]; ORCiD logo [4]
  1. National University of Singapore, Department of Physics, Graphene Research Centre, 2 Science Drive 3, Singapore, 117551, Singapore
  2. The University of Texas at Austin, Department of Physics, 2515 Speedway, C1600 Austin, Austin, 78712-1192, Texas (United States)
  3. • The University of Texas at Austin, Department of Physics, 2515 Speedway, C1600 Austin, Austin, 78712-1192, Texas (United States)
  4. Department of Physics, Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore; Yale-NUS College, 6 College Avenue East, Singapore, 138614, Singapore

Recent progress in preparing well-controlled two-dimensional van der Waals heterojunctions has opened up a new frontier in materials physics. Here we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behaviour by accounting first for the structural relaxation of graphene’s carbon atoms when placed on a boron nitride substrate, and then for the influence of the substrate on low-energy π-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions.

Research Organization:
Univ. of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Research Foundation of Singapore; Welch Foundation
Grant/Contract Number:
FG02-84ER45118; NRF-NRFF2012-01; TBF1473
OSTI ID:
1623965
Journal Information:
Nature Communications, Vol. 6, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS 2 /WSe 2 hetero-bilayers journal January 2017
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Conductance signatures of electron confinement induced by strained nanobubbles in graphene text January 2015
Topological Phases in Two-Dimensional Materials: A Brief Review text January 2015
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Electronic Structure Theory of Weakly Interacting Bilayers text January 2016
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Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure text January 2016
Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction text January 2017
General theoretical description of angle-resolved photoemission spectroscopy of van der Waals structures text January 2017
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Electronic spectrum of twisted graphene layers under heterostrain text January 2018
Substrate-induced topological minibands in graphene text January 2018
Pressure-Induced Metal-Insulator Transition in Twisted Bi-layer Graphene text January 2018
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