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Title: Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights

Abstract

Ballistic-electron emission microscopy (BEEM) was performed for Au and Mg films on n-type GaP(110). BEEM spectra taken with tip voltages up to 6 eV reveal a strong dependence of the spectral shape on metal-film thickness and on the type of the metal. Monte Carlo simulations of the electron transport allow a quantitative description of the BEEM current, and provide information on the tunneling process, on hot-electron transport in the metal film, on transmission across the interface, and on impact ionization within the semiconductor. In addition, the simulations quantitatively account for the observed dependence of the BEEM current on topographic features. The Schottky-barrier heights were also found to increase with the thickness of the metal film, demonstrating that Schottky-barrier formation is not yet completed when the overlayer metallizes. 22 refs., 5 figs., 1 tab.

Authors:
; ;  [1]
  1. Freie Universitaet Berlin (Germany); and others
Publication Date:
OSTI Identifier:
161738
Report Number(s):
CONF-930115-
Journal ID: JVTBD9; ISSN 0734-211X; TRN: 95:004881-0058
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 11; Journal Issue: 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 40 CHEMISTRY; 66 PHYSICS; GALLIUM PHOSPHIDES; ELECTRON MICROSCOPY; GOLD; MAGNESIUM; ELECTRON EMISSION; INTERFACES; IONIZATION; SPECTRA; SHAPE; MONTE CARLO METHOD; SEMICONDUCTOR MATERIALS

Citation Formats

Bauer, A, Cuberes, M T, and Prietsch, M. Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights. United States: N. p., 1993. Web. doi:10.1116/1.586974.
Bauer, A, Cuberes, M T, & Prietsch, M. Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights. United States. doi:10.1116/1.586974.
Bauer, A, Cuberes, M T, and Prietsch, M. Thu . "Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights". United States. doi:10.1116/1.586974.
@article{osti_161738,
title = {Ballistic-electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky-barrier heights},
author = {Bauer, A and Cuberes, M T and Prietsch, M},
abstractNote = {Ballistic-electron emission microscopy (BEEM) was performed for Au and Mg films on n-type GaP(110). BEEM spectra taken with tip voltages up to 6 eV reveal a strong dependence of the spectral shape on metal-film thickness and on the type of the metal. Monte Carlo simulations of the electron transport allow a quantitative description of the BEEM current, and provide information on the tunneling process, on hot-electron transport in the metal film, on transmission across the interface, and on impact ionization within the semiconductor. In addition, the simulations quantitatively account for the observed dependence of the BEEM current on topographic features. The Schottky-barrier heights were also found to increase with the thickness of the metal film, demonstrating that Schottky-barrier formation is not yet completed when the overlayer metallizes. 22 refs., 5 figs., 1 tab.},
doi = {10.1116/1.586974},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 4,
volume = 11,
place = {United States},
year = {1993},
month = {7}
}