High resolution x-ray photoemission spectroscopy studies of thin SiO{sub 2} and Si/SiO{sub 2} interfaces

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586964· OSTI ID:161733

Hattori, Takeo ^[1]

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1. Musashi Institute of Technology, Tokyo (Japan)

The important results for the control of the SiO{sub 2}/Si interface structure in atomic scale have been obtained recently. In the present article the structural imperfections in the ultrathin oxide, which cannot be determined uniquely by x-ray photoemission spectroscopy, in addition to the early stage of interface formation are discussed. The Si 2p photoelectron spectra arising from Si-Si bonds in the oxide near the interface were confirmed from the measurement of reflectance in vacuum ultraviolet. The Si 2p photoelectron spectra arising from Si-H bonds in the oxide were confirmed by multiple internal reflection infrared absorption spectroscopy. 32 refs., 11 figs.

• OSTI ID: 161733
• Report Number(s): CONF-930115-; ISSN 0734-211X; CNN: Grant 01065003; TRN: 95:004881-0053
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
SILICA
MICROSTRUCTURE
SILICON
ABSORPTION SPECTROSCOPY
INTERFACES
REFLECTION
RESOLUTION
SPECTRA
ELECTRONIC STRUCTURE
TRAPS