Control of deposition rate in remote plasma enhanced chemical vapor deposition of Ge{sub x}Si{sub 1-x}/Si heteroepitaxial films
- Univ. of Texas, Austin, TX (United States); and others
The addition of germane and dopant gases significantly alter the growth kinetics of low temperature Si epitaxy. Germane, phosphine, and diborane have been reported to both enhance and retard film growth rate in various processes. The growth kinetics of remote plasma enhanced chemical vapor deposition are largely unaffected by the addition of GeH{sub 4} or by in situ doping. Adsorption sites are created by low energy ion bombardment and are only minimally dependent on temperature for activation. Ion-induced gas phase reactions also play an important role in the deposition via formation of precursors which have greater sticking probabilities and insertion rates into the hydrogenated surface than for the direct reactions of SiH{sub 4} and GeH{sub 4} with the Si surface in thermal chemical vapor deposition. 17 refs., 4 figs.
- OSTI ID:
- 161710
- Report Number(s):
- CONF-930115-; ISSN 0734-211X; CNN: Contract N00014-87-K-0323; Grant CHE8920120; TRN: 95:004881-0028
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
- Country of Publication:
- United States
- Language:
- English
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