Surface stoichiometry and interface formation during molecular-beam epitaxy of strained InAs/Al{sub x}Ga{sub 0.48-x}In{sub 0.52}As heterostructures
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)
We show that the surface stoichiometry of the film{emdash}i.e., cation- or anion-stable surface{emdash} provides a unique means to control the interface formation and sample quality during molecular-beam epitaxy of strained InAs films buried in an A1{sub x}Ga{sub 0.48-x}In{sub 0.52}As matrix lattice matched to InP substrates. When the highly (3.2%) strained InAs films are grown under As-stable conditions, islanding occurs which leads to defected interfaces. On the contrary, under In-stable conditions islanding of the InAs films is prevented and high quality strained interfaces are obtained. 14 refs., 6 figs.
- OSTI ID:
- 161708
- Report Number(s):
- CONF-930115-; ISSN 0734-211X; TRN: 95:004881-0026
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well
Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Growth of high quality Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures using strain relaxed Al{sub {ital x}}Ga{sub {ital y}}In{sub 1{minus}{ital x}{minus}{ital y}}As buffer layers on GaAs
Journal Article
·
Mon May 15 00:00:00 EDT 2017
· Crystallography Reports
·
OSTI ID:161708
+6 more
Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Journal Article
·
Fri May 15 00:00:00 EDT 2015
· Crystallography Reports
·
OSTI ID:161708
+6 more
Growth of high quality Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures using strain relaxed Al{sub {ital x}}Ga{sub {ital y}}In{sub 1{minus}{ital x}{minus}{ital y}}As buffer layers on GaAs
Journal Article
·
Mon Jul 01 00:00:00 EDT 1996
· Applied Physics Letters
·
OSTI ID:161708
+3 more