Molecular-beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self-organization and step bunching
- Univ. of California, Santa Barbara, CA (United States); and others
The growth mechanisms of (Al,Ga)As lateral superlattices (LSL) on GaAs(100) and GaAs (110) vicinal surfaces were studied using transmission electron microscopy (TEM) and Monte Carlo simulations. In GaAs(100) surfaces, spontaneous formation of a LSL from (AlAs){sub 1} (GaAs){sub 1} short period superlattices; is explained by a vertical exchange reaction model. This mechanism may be the underlying cause of poor lateral segregation in conventional fractional layer (Al,Ga)As LSL. Growth on vicinal GaAs(110) surfaces leads to periodic faceting. Cross-sectional TEM images were compared with simulation of a step-flow model to understand the process of step bunching and the evolution of periodic microfacets. 21 refs., 3 figs.
- OSTI ID:
- 161707
- Report Number(s):
- CONF-930115-; ISSN 0734-211X; TRN: 95:004881-0025
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
- Country of Publication:
- United States
- Language:
- English
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