Effects of reactive ion etching on optical and electro-optical properties of GaInAs/InP based strip-loaded waveguides
- Technical Univ. of Denmark, Lyngby (Denmark)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Telecommunications Research Lab., Horsholm (Denmark); and others
A systematic analysis of how CH{sub 4}/H{sub 2} based reactive ion etching affects the optical and electro-optical properties of GaInAs/InP multiple quantum well pin diode strip-loaded waveguides is reported. The study includes measurements of waveguiding properties, optical losses and electro-optical phase modulation as function of etch depth, radio-frequency (rf) power, pressure, and the CH{sub 4} content in the etch process. It is found that the optical losses of the waveguides are most sensitive to the etching conditions, in particular the rf power. As the rf-power density was varied from 0.27 to 1.09 W/cm{sup 2}, the optical losses increased from 6.8 to 19.6 dB/cm. The waveguiding and electro-optical properties were found to be much less sensitive to the etching parameters. For a 5-{mu}m-wide waveguide, the full width half-maximum of the optical mode is typically 5 {mu}m and the average voltage needed to produce a {pi} phase shift is 4 V corresponding to a modulation response of 15{degrees}/V mm. 23 refs., 7 figs., 1 tab.
- OSTI ID:
- 161687
- Report Number(s):
- CONF-930115-; ISSN 0734-211X; TRN: 95:004881-0003
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 4; Conference: 20. physics and chemistry of semiconductor interfaces, Williamsburg, VA (United States), 25-29 Jan 1993; Other Information: PBD: Jul-Aug 1993
- Country of Publication:
- United States
- Language:
- English
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