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Title: Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se 2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Abstract

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-x Ga x Se2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [3];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Cheng Kung Univ., Tainan (Taiwan)
Publication Date:
Research Org.:
Texas State Univ., San Marcos, TX (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; Ministry of Science and Technology, Taiwan
OSTI Identifier:
1615907
Alternate Identifier(s):
OSTI ID: 1659904
Report Number(s):
NREL/JA-5K00-76618
Journal ID: ISSN 0021-4922
Grant/Contract Number:  
EE0007541; AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 59; Journal Issue: 5; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CIGS; Cu(In,Ga)Se2; band offset; temperature dependent open-circuit voltage; illumination dependent open-circuit voltage; illumination dependent photoluminescence intensity; temperature dependent photoluminescence intensity; quasi-Fermi-level splitting

Citation Formats

Swartz, Craig H., Paul, Sanjoy, Mansfield, Lorelle, Li, Jian V., and Holtz, Mark. Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence. United States: N. p., 2020. Web. doi:10.35848/1347-4065/ab89f8.
Swartz, Craig H., Paul, Sanjoy, Mansfield, Lorelle, Li, Jian V., & Holtz, Mark. Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence. United States. https://doi.org/10.35848/1347-4065/ab89f8
Swartz, Craig H., Paul, Sanjoy, Mansfield, Lorelle, Li, Jian V., and Holtz, Mark. Thu . "Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence". United States. https://doi.org/10.35848/1347-4065/ab89f8.
@article{osti_1615907,
title = {Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence},
author = {Swartz, Craig H. and Paul, Sanjoy and Mansfield, Lorelle and Li, Jian V. and Holtz, Mark},
abstractNote = {Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-x Ga x Se2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.},
doi = {10.35848/1347-4065/ab89f8},
url = {https://www.osti.gov/biblio/1615907}, journal = {Japanese Journal of Applied Physics},
issn = {0021-4922},
number = 5,
volume = 59,
place = {United States},
year = {2020},
month = {4}
}

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