The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations
Journal Article
·
· Journal of Nuclear Materials
Not provided.
- Research Organization:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE)
- DOE Contract Number:
- NE0008827
- OSTI ID:
- 1613966
- Journal Information:
- Journal of Nuclear Materials, Vol. 514, Issue C; ISSN 0022-3115
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structure of hydrogenated amorphous silicon from ab initio molecular dynamics
Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study
Solvent-Induced Frequency Shifts of 5-Hydroxymethylfurfural Deduced via Infrared Spectroscopy and ab Initio Calculations
Journal Article
·
Sun Sep 15 00:00:00 EDT 1991
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:1613966
+1 more
Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study
Journal Article
·
Mon Jan 18 00:00:00 EST 1988
· Phys. Rev. Lett.; (United States)
·
OSTI ID:1613966
Solvent-Induced Frequency Shifts of 5-Hydroxymethylfurfural Deduced via Infrared Spectroscopy and ab Initio Calculations
Journal Article
·
Fri Dec 26 00:00:00 EST 2014
· J. Phys. Chem. A
·
OSTI ID:1613966
+3 more