TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

DelaCruz, Steven; Wang, Zhongtao; Cheng, Ping; Carraro, Carlo; Maboudian, Roya

doi:10.1016/j.tsf.2018.11.058

Title: TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

Journal Article · Thu Nov 29 00:00:00 EST 2018 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2018.11.058· OSTI ID:1613677

^[1]; Wang, Zhongtao ^[2]; Cheng, Ping ^[3]; Carraro, Carlo ^[1];

^[1]

University of California, Berkeley, CA (United States)
University of California, Berkeley, CA (United States); Harbin Institute of Technology (China)
University of California, Berkeley, CA (United States); Shanghai Jiao Tong University (China)

The effect of high-temperature annealing on tungsten (W) films deposited on silicon carbide (SiC) with and without a titanium nitride (TiN) diffusion barrier was examined as a function of time. Evolutions in phase composition, surface morphology, and roughness from annealing at 1273 K were investigated for up to 24 h. Without a TiN diffusion barrier, solid state reactions between the W film and SiC substrate led to the formation of W₅Si₃, W₂C, and WC species and the rise of an inhomogeneous surface structure that was initially web-like and later discontinuous. Severe roughening on the order of the initial film thickness was observed. Incorporation of a 100 nm TiN diffusion barrier suppressed the formation of W₅Si₃ and W₂C and only trace WC could be detected due to species diffusion through TiN grain boundaries. Changes in the surface structure and roughness were minimal. Our results warrant consideration of TiN as an effective diffusion barrier for W on SiC systems where structural stability at high temperatures is highly desired.

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Research Organization:: Stanford Univ., CA (United States); Univ. of California, Berkeley, CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AR0000664; AC02-05CH11231

OSTI ID:: 1613677

Alternate ID(s):: OSTI ID: 1636052

Journal Information:: Thin Solid Films, Vol. 670, Issue C; ISSN 0040-6090

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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Title: TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature

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