Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe 2 Using Electron Energy-Loss Spectroscopy in the Scanning Transmission Electron Microscope

Journal Article · · Advanced Energy Materials
 [1];  [2];  [3];  [3];  [3];  [2];  [1];  [4]
  1. Department of Materials Science and EngineeringThe Ohio State University Columbus 43210 OH USA
  2. Department of Electrical and Computer EngineeringThe Ohio State University Columbus 43210 OH USA
  3. MiaSolé Hi‐Tech Corp. Santa Clara 95051 CA USA
  4. Department of Materials Science and EngineeringThe Ohio State University Columbus 43210 OH USA; Department of Electrical and Computer EngineeringThe Ohio State University Columbus 43210 OH USA

Not provided.

Research Organization:
Colorado School of Mines, Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0007141
OSTI ID:
1613417
Journal Information:
Advanced Energy Materials, Vol. 9, Issue 35; ISSN 1614-6832
Publisher:
Wiley
Country of Publication:
United States
Language:
English

References (42)

Electron energy-loss spectroscopy in the TEM journal December 2008
Direct nm-Scale Spatial Mapping of Traps in CIGS journal September 2015
Impact of interface traps on gate-induced drain leakage current in n -type metal oxide semiconductor field effect transistor journal September 2005
High efficiency GaN-based LEDs and lasers on SiC journal December 2004
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors journal July 1974
Determination of the band gap depth profile of the penternary Cu(In(1−X)GaX)(SYSe(1−Y))2 chalcopyrite from its composition gradient journal October 2004
Dark current analysis in high-speed germanium p-i-n waveguide photodetectors journal June 2016
Light induced degradation of Cu(In,Ga)Se 2 thin film surfaces journal July 2017
Efficiency limitations for wide-band-gap chalcopyrite solar cells journal June 2005
Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy journal March 2018
Solution-processed Cu(In,Ga)(S,Se) 2 absorber yielding a 15.2% efficient solar cell : Solution-processed CIGS absorber journal January 2012
2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT journal August 2014
Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se 2 solar cells : P-N junction of alkali-incorporated Cu(In,Ga)Se journal April 2017
Photovoltaic materials: Present efficiencies and future challenges journal April 2016
The electronic structure of Cu(In1−xGax)Se2 alloyed with silver journal August 2011
Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy journal September 2004
Grain engineering: How nanoscale inhomogeneities can control charge collection in solar cells journal February 2017
Effect of selenization and sulfurization on the structure and performance of CIGS solar cell journal November 2017
25th Anniversary Article: Bulk Heterojunction Solar Cells: Understanding the Mechanism of Operation journal December 2013
Understanding defect-related issues limiting efficiency of CIGS solar cells journal August 2009
Relation between electrical properties and composition in CuInSe2 single crystals journal May 1990
Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell journal March 2012
Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1−xGax)Se2 thin films versus optical band gap journal June 2005
Defect physics of the CuInSe 2 chalcopyrite semiconductor journal April 1998
Device characterization of (AgCu)(InGa)Se2 solar cells conference June 2010
The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? journal June 2015
Metal-Insulator-Semiconductor Photodetectors journal September 2010
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives journal June 2008
Spatially-resolved spectroscopic measurements of E c  − 0.57 eV traps in AlGaN/GaN high electron mobility transistors journal May 2013
Direct and indirect transitions in the region of the band gap using electron-energy-loss spectroscopy journal October 1998
High dislocation densities in high efficiency GaN‐based light‐emitting diodes journal March 1995
Fundamentals of electron energy-loss spectroscopy journal February 2016
Experimental method for determining Cliff–Lorimer factors in transmission electron microscopy (TEM) utilizing stepped wedge-shaped specimens prepared by focused ion beam (FIB) thinning journal October 1999
Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation journal September 2005
Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements journal February 2009
Studies of Hot-Electron Degradation in GaN HEMTs with Varying Gate Recess Depths conference January 2004
Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers conference June 2009
Towards sub-10 meV energy resolution STEM-EELS journal June 2014
Investigation of local chemical and electronic properties of small particles with EELS point analysis and image energy filtering in a STEM journal March 1989
Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs journal January 2017
Spatial correlation of the E C -0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride journal June 2018
Direct nm-scale spatial mapping of traps in CIGS conference June 2015