Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12

Hickey, Danielle Reifsnyder; Azadani, Javad G.; Richardella, Anthony R.; Kally, James C.; Lee, Joon Sue; Chang, Houchen; Liu, Tao; Wu, Mingzhong; Samarth, Nitin; Low, Tony; Mkhoyan, K. Andre

doi:10.1103/physrevmaterials.3.061201

Title: Structure and basal twinning of topological insulator Bi₂Se₃ grown by MBE onto crystalline Y₃Fe₅O₁₂

Journal Article · Tue Jun 25 00:00:00 EDT 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.3.061201· OSTI ID:1613049

Hickey, Danielle Reifsnyder ^[1]; Azadani, Javad G. ^[2]; Richardella, Anthony R. ^[3]; Kally, James C. ^[3]; Lee, Joon Sue ^[4]; Chang, Houchen ^[5]; Liu, Tao ^[5]; Wu, Mingzhong ^[5]; Samarth, Nitin ^[3]; Low, Tony ^[2];

^[2]

Univ. of Minnesota, Minneapolis, MN (United States); Pennsylvania State Univ., University Park, PA (United States)
Univ. of Minnesota, Minneapolis, MN (United States)
Pennsylvania State Univ., University Park, PA (United States)
Pennsylvania State Univ., University Park, PA (United States); Univ. of California, Santa Barbara, CA (United States)
Colorado State Univ., Fort Collins, CO (United States)

Whereas thin films of topological insulators grown by molecular beam epitaxy often display regular, triangular features, Bi₂Se₃ films grown onto yttrium iron garnet (YIG) display much greater disorder. Here, we present observations of various types of disorder present in these films using atomic force microscopy and scanning transmission electron microscopy. Furthermore, the investigation reveals the presence of an amorphous metal oxide layer between the substrate and the film, which appears to smooth out the nanometer-scale undulations in the YIG surface. It also shows the existence of quasiordered arrays of heavy atoms in some interfacial regions, as well as rotations and tilting between adjacent grains and basal twinning at various heights in the film. Using density functional theory, we explore the impact of these prominent basal twins on the electronic structure of the film.

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Research Organization:: Colorado State Univ., Fort Collins, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0018994

OSTI ID:: 1613049

Alternate ID(s):: OSTI ID: 1546366

Journal Information:: Physical Review Materials, Vol. 3, Issue 6; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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Title: Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12

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Title: Structure and basal twinning of topological insulator Bi₂Se₃ grown by MBE onto crystalline Y₃Fe₅O₁₂