Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12
Abstract
Whereas thin films of topological insulators grown by molecular beam epitaxy often display regular, triangular features, Bi2Se3 films grown onto yttrium iron garnet (YIG) display much greater disorder. Here, we present observations of various types of disorder present in these films using atomic force microscopy and scanning transmission electron microscopy. Furthermore, the investigation reveals the presence of an amorphous metal oxide layer between the substrate and the film, which appears to smooth out the nanometer-scale undulations in the YIG surface. It also shows the existence of quasiordered arrays of heavy atoms in some interfacial regions, as well as rotations and tilting between adjacent grains and basal twinning at various heights in the film. Using density functional theory, we explore the impact of these prominent basal twins on the electronic structure of the film.
- Authors:
-
- Univ. of Minnesota, Minneapolis, MN (United States); Pennsylvania State Univ., University Park, PA (United States)
- Univ. of Minnesota, Minneapolis, MN (United States)
- Pennsylvania State Univ., University Park, PA (United States)
- Pennsylvania State Univ., University Park, PA (United States); Univ. of California, Santa Barbara, CA (United States)
- Colorado State Univ., Fort Collins, CO (United States)
- Publication Date:
- Research Org.:
- Colorado State Univ., Fort Collins, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1613049
- Alternate Identifier(s):
- OSTI ID: 1546366
- Grant/Contract Number:
- SC0018994
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 6; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials Science; Band gap; Electronic structure; Twinning; Solid-solid interfaces; Topological materials; Density functional calculations; Scanning transmission electron microscopy
Citation Formats
Hickey, Danielle Reifsnyder, Azadani, Javad G., Richardella, Anthony R., Kally, James C., Lee, Joon Sue, Chang, Houchen, Liu, Tao, Wu, Mingzhong, Samarth, Nitin, Low, Tony, and Mkhoyan, K. Andre. Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12. United States: N. p., 2019.
Web. doi:10.1103/physrevmaterials.3.061201.
Hickey, Danielle Reifsnyder, Azadani, Javad G., Richardella, Anthony R., Kally, James C., Lee, Joon Sue, Chang, Houchen, Liu, Tao, Wu, Mingzhong, Samarth, Nitin, Low, Tony, & Mkhoyan, K. Andre. Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12. United States. https://doi.org/10.1103/physrevmaterials.3.061201
Hickey, Danielle Reifsnyder, Azadani, Javad G., Richardella, Anthony R., Kally, James C., Lee, Joon Sue, Chang, Houchen, Liu, Tao, Wu, Mingzhong, Samarth, Nitin, Low, Tony, and Mkhoyan, K. Andre. 2019.
"Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12". United States. https://doi.org/10.1103/physrevmaterials.3.061201. https://www.osti.gov/servlets/purl/1613049.
@article{osti_1613049,
title = {Structure and basal twinning of topological insulator Bi2Se3 grown by MBE onto crystalline Y3Fe5O12},
author = {Hickey, Danielle Reifsnyder and Azadani, Javad G. and Richardella, Anthony R. and Kally, James C. and Lee, Joon Sue and Chang, Houchen and Liu, Tao and Wu, Mingzhong and Samarth, Nitin and Low, Tony and Mkhoyan, K. Andre},
abstractNote = {Whereas thin films of topological insulators grown by molecular beam epitaxy often display regular, triangular features, Bi2Se3 films grown onto yttrium iron garnet (YIG) display much greater disorder. Here, we present observations of various types of disorder present in these films using atomic force microscopy and scanning transmission electron microscopy. Furthermore, the investigation reveals the presence of an amorphous metal oxide layer between the substrate and the film, which appears to smooth out the nanometer-scale undulations in the YIG surface. It also shows the existence of quasiordered arrays of heavy atoms in some interfacial regions, as well as rotations and tilting between adjacent grains and basal twinning at various heights in the film. Using density functional theory, we explore the impact of these prominent basal twins on the electronic structure of the film.},
doi = {10.1103/physrevmaterials.3.061201},
url = {https://www.osti.gov/biblio/1613049},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 6,
volume = 3,
place = {United States},
year = {Tue Jun 25 00:00:00 EDT 2019},
month = {Tue Jun 25 00:00:00 EDT 2019}
}
Web of Science
Works referenced in this record:
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/yttrium iron garnet heterostructures
journal, January 2018
- Fanchiang, Y. T.; Chen, K. H. M.; Tseng, C. C.
- Nature Communications, Vol. 9, Issue 1
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates
journal, March 2012
- Tarakina, N. V.; Schreyeck, S.; Borzenko, T.
- Crystal Growth & Design, Vol. 12, Issue 4, p. 1913-1918
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi 2 Se 3
journal, September 2015
- Jamali, Mahdi; Lee, Joon Sue; Jeong, Jong Seok
- Nano Letters, Vol. 15, Issue 10
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009
- Chen, Y. L.; Analytis, J. G.; Chu, J.-H.
- Science, Vol. 325, Issue 5937, p. 178-181
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator
journal, October 2015
- Lee, Joon Sue; Richardella, Anthony; Hickey, Danielle Reifsnyder
- Physical Review B, Vol. 92, Issue 15
Suppressing Twin Formation in Bi 2 Se 3 Thin Films
journal, May 2014
- Tarakina, N. V.; Schreyeck, S.; Luysberg, M.
- Advanced Materials Interfaces, Vol. 1, Issue 5
Mode of Growth of Ultrathin Topological Insulator Bi 2 Te 3 Films on Si (111) Substrates
journal, November 2012
- Borisova, Svetlana; Krumrain, Julian; Luysberg, Martina
- Crystal Growth & Design, Vol. 12, Issue 12
Characterizing the structure of topological insulator thin films
journal, August 2015
- Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue
- APL Materials, Vol. 3, Issue 8
Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
journal, December 2010
- Richardella, A.; Zhang, D. M.; Lee, J. S.
- Applied Physics Letters, Vol. 97, Issue 26
Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures
journal, August 2015
- Lee, Y. F.; Kumar, R.; Hunte, F.
- Acta Materialia, Vol. 95
Surface and substrate induced effects on thin films of the topological insulators Bi Se and Bi Te
journal, May 2013
- Liu, Wenliang; Peng, Xiangyang; Wei, Xiaolin
- Physical Review B, Vol. 87, Issue 20
Spin Polarization and Transport of Surface States in the Topological Insulators and from First Principles
journal, December 2010
- Yazyev, Oleg V.; Moore, Joel E.; Louie, Steven G.
- Physical Review Letters, Vol. 105, Issue 26
Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
journal, January 2013
- He, Liang; Kou, Xufeng; Wang, Kang L.
- physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2, p. 50-63
Proximity Induced High-Temperature Magnetic Order in Topological Insulator - Ferrimagnetic Insulator Heterostructure
journal, May 2014
- Lang, Murong; Montazeri, Mohammad; Onbasli, Mehmet C.
- Nano Letters, Vol. 14, Issue 6
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006
- Grimme, Stefan
- Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
Spin-transfer torque generated by a topological insulator
journal, July 2014
- Mellnik, A. R.; Lee, J. S.; Richardella, A.
- Nature, Vol. 511, Issue 7510
Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films
journal, July 2018
- Dc, Mahendra; Grassi, Roberto; Chen, Jun-Yang
- Nature Materials, Vol. 17, Issue 9
Reduced twinning and surface roughness of Bi 2 Se 3 and Bi 2 Te 3 layers grown by molecular beam epitaxy on sapphire substrates
journal, March 2018
- Levy, Ido; Garcia, Thor Axtmann; Shafique, Sharmin
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 36, Issue 2
Free-electron creation at the 60° twin boundary in Bi2Te3
journal, August 2016
- Kim, Kwang-Chon; Lee, Joohwi; Kim, Byung Kyu
- Nature Communications, Vol. 7, Issue 1
Tuning Dirac states by strain in the topological insulator Bi2Se3
journal, March 2014
- Liu, Y.; Li, Y. Y.; Rajput, S.
- Nature Physics, Vol. 10, Issue 4
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010
- Zhang, Yi; He, Ke; Chang, Cui-Zu
- Nature Physics, Vol. 6, Issue 8
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
journal, October 2010
- Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping
- Applied Physics Letters, Vol. 97, Issue 14, Article No. 143118
Electronic structure of compounds: Comparison of theoretical calculations with photoemission studies
journal, February 2002
- Larson, P.; Greanya, V. A.; Tonjes, W. C.
- Physical Review B, Vol. 65, Issue 8
Topological states ruled by stacking faults in Bi2Se3 and Bi2Te3
journal, January 2013
- Seixas, L.; Abdalla, L. B.; Schmidt, T. M.
- Journal of Applied Physics, Vol. 113, Issue 2
Strain in epitaxial Bi 2 Se 3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study
journal, August 2015
- Li, Bin; Guo, Xin; Ho, Wingkin
- Applied Physics Letters, Vol. 107, Issue 8
Domain formation due to surface steps in topological insulator Bi 2 Te 3 thin films grown on Si (111) by molecular beam epitaxy
journal, August 2013
- Borisova, S.; Kampmeier, J.; Luysberg, M.
- Applied Physics Letters, Vol. 103, Issue 8
Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi 2 Se 3 thin films on hexagonal boron nitride
journal, September 2016
- Park, Joon Young; Lee, Gil-Ho; Jo, Janghyun
- 2D Materials, Vol. 3, Issue 3
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
journal, February 2020
- Tatemizo, Nobuyuki; Imada, Saki; Okahara, Kizuna
- Scientific Reports, Vol. 10, Issue 1
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
text, January 2010
- Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping
- arXiv
Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator
text, January 2015
- Lee, Joon Sue; Richardella, Anthony; Hickey, Danielle Reifsnyder
- arXiv
Works referencing / citing this record:
Large-scale interlayer rotations and Te grain boundaries in thin films
journal, January 2020
- Reifsnyder Hickey, Danielle; Wu, Ryan J.; Lee, Joon Sue
- Physical Review Materials, Vol. 4, Issue 1