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Title: Solvent-free vacuum growth of oriented HKUST-1 thin films

Journal Article · · Journal of Materials Chemistry. A
DOI:https://doi.org/10.1039/c9ta05179a· OSTI ID:1612845
 [1];  [1];  [1];  [2]; ORCiD logo [3]
  1. Department of Chemistry; University of Texas at Austin; Austin; USA
  2. McKetta Department of Chemical Engineering; University of Texas at Austin; Austin; USA
  3. Department of Chemistry; University of Texas at Austin; Austin; USA; McKetta Department of Chemical Engineering

H3BTC and Cu are sequentially deposited to form highly oriented HKUST-1 thin films under vacuum without the use of solvents.

Research Organization:
Univ. of Texas, Austin, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0018116
OSTI ID:
1612845
Journal Information:
Journal of Materials Chemistry. A, Vol. 7, Issue 33; ISSN 2050-7488
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English

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