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Title: The role of transient surface morphology on composition control in AlGaN layers and wells

Abstract

The mechanisms governing “compositional pulling” during the growth of Al xGa 1- xN wells are investigated. Gallium-rich Al xGa 1- xN wells grown on high dislocation density AlN/sapphire templates exhibit asymmetric and diffuse composition profiles, while those grown on low dislocation density native AlN substrates do not. Furthermore, strain in all Al xGa 1- xN wells is found to be pseudomorphic, ruling it out as the dominating driving force. Rather, the high threading dislocation density of the AlN template is considered to play the defining role. We propose that a transient surface morphology is introduced during dislocation mediated spiral growth, which, in conjunction with process supersaturation, determines the Ga incorporation. Finally, these findings provide insights into compositional pulling in high Ga content Al xGa 1- xN grown on AlN and provide a route to grow thicker wells with very abrupt interfaces on native AlN substrates.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2]; ORCiD logo [3];  [1];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Adroit Materials, Inc., Cary, NC (United States)
  3. North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)
Publication Date:
Research Org.:
Adroit Materials, Cary, NC (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); US Department of the Navy, Office of Naval Research (ONR)
OSTI Identifier:
1611696
Grant/Contract Number:  
SC0011883; ECCS-1508854; ECCS-1610992; DMR-1508191; ECCS-1653383; W911NF-15-2-0068; W911NF-16-C-0101; FA9550-17-1-0225; FA9550-14-1-0182; N62909-17-1-2004; DGE-1252376
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; physics

Citation Formats

Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, and LeBeau, James M. The role of transient surface morphology on composition control in AlGaN layers and wells. United States: N. p., 2019. Web. doi:10.1063/1.5063933.
Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, & LeBeau, James M. The role of transient surface morphology on composition control in AlGaN layers and wells. United States. doi:10.1063/1.5063933.
Houston Dycus, J., Washiyama, Shun, Eldred, Tim B., Guan, Yan, Kirste, Ronny, Mita, Seiji, Sitar, Zlatko, Collazo, Ramon, and LeBeau, James M. Wed . "The role of transient surface morphology on composition control in AlGaN layers and wells". United States. doi:10.1063/1.5063933. https://www.osti.gov/servlets/purl/1611696.
@article{osti_1611696,
title = {The role of transient surface morphology on composition control in AlGaN layers and wells},
author = {Houston Dycus, J. and Washiyama, Shun and Eldred, Tim B. and Guan, Yan and Kirste, Ronny and Mita, Seiji and Sitar, Zlatko and Collazo, Ramon and LeBeau, James M.},
abstractNote = {The mechanisms governing “compositional pulling” during the growth of AlxGa1-xN wells are investigated. Gallium-rich AlxGa1-xN wells grown on high dislocation density AlN/sapphire templates exhibit asymmetric and diffuse composition profiles, while those grown on low dislocation density native AlN substrates do not. Furthermore, strain in all AlxGa1-xN wells is found to be pseudomorphic, ruling it out as the dominating driving force. Rather, the high threading dislocation density of the AlN template is considered to play the defining role. We propose that a transient surface morphology is introduced during dislocation mediated spiral growth, which, in conjunction with process supersaturation, determines the Ga incorporation. Finally, these findings provide insights into compositional pulling in high Ga content AlxGa1-xN grown on AlN and provide a route to grow thicker wells with very abrupt interfaces on native AlN substrates.},
doi = {10.1063/1.5063933},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 114,
place = {United States},
year = {2019},
month = {1}
}

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