Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn-Based Materials

Ren, Wuyang; Zhu, Hangtian; Mao, Jun; You, Li; Song, Shaowei; Tong, Tian; Bao, Jiming; Luo, Jun; Wang, Zhiming; Ren, Zhifeng

doi:10.1002/aelm.201900166

Title: Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn-Based Materials

Journal Article · Mon May 06 00:00:00 EDT 2019 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201900166· OSTI ID:1611546

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^[2]; You, Li ^[3]; Song, Shaowei ^[2]; Tong, Tian ^[4];

^[4]; Luo, Jun ^[5]; Wang, Zhiming ^[6];

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Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and Technology of China Chengdu 610054 China; Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA
Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA
Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA; School of Materials Science and EngineeringShanghai University Shanghai 200444 China
Department of Electrical and Computer EngineeringUniversity of Houston Houston TX 77204 USA
School of Materials Science and EngineeringShanghai University Shanghai 200444 China
Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and Technology of China Chengdu 610054 China

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Research Organization:: Univ. of Houston, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0010831

OSTI ID:: 1611546

Journal Information:: Advanced Electronic Materials, Vol. 5, Issue 7; ISSN 2199-160X

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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