Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Lin, Yuxuan; Ma, Qiong; Shen, Pin-Chun; Ilyas, Batyr; Bie, Yaqing; Liao, Albert; Ergeçen, Emre; Han, Bingnan; Mao, Nannan; Zhang, Xu; Ji, Xiang; Zhang, Yuhao; Yin, Jihao; Huang, Shengxi; Dresselhaus, Mildred; Gedik, Nuh; Jarillo-Herrero, Pablo; Ling, Xi; Kong, Jing; Palacios, Tomás

doi:10.1126/sciadv.aav1493

Title: Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Journal Article · Fri Jun 14 00:00:00 EDT 2019 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aav1493· OSTI ID:1610524

^[1]; Ma, Qiong ^[1];

^[1];

^[1]; Bie, Yaqing ^[1]; Liao, Albert ^[1]; Ergeçen, Emre ^[1];

^[2]; Mao, Nannan ^[1]; Zhang, Xu ^[1]; Ji, Xiang ^[1];

^[1];

^[3];

^[4]; Dresselhaus, Mildred ^[1];

^[1];

^[1]; Ling, Xi ^[5];

^[1];

^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Beihang Univ., Beijing (China)
Beihang Univ., Beijing (China)
Pennsylvania State Univ., University Park, PA (United States)
Boston Univ., MA (United States)

The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS₂. Very different hot-carrier cooling mechanisms on the graphene and the MoS₂sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001088; SC0012509

OSTI ID:: 1610524

Journal Information:: Science Advances, Vol. 5, Issue 6; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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