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Title: Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices

Abstract

Not provided.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [3];  [4]; ORCiD logo [3]; ORCiD logo [5]
  1. Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, College of Engineering, Peking University, Beijing 100871, China; Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
  2. International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China; Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
  3. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
  4. Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States; Beijing Computational Science Research Center, Beijing 100193, China
  5. Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, College of Engineering, Peking University, Beijing 100871, China
Publication Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1609547
DOE Contract Number:  
FG02-04ER46148
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 19; Journal Issue: 9; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Li, Xiaoyin, Zhang, Shunhong, Huang, Huaqing, Hu, Lin, Liu, Feng, and Wang, Qian. Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices. United States: N. p., 2019. Web. doi:10.1021/acs.nanolett.9b01812.
Li, Xiaoyin, Zhang, Shunhong, Huang, Huaqing, Hu, Lin, Liu, Feng, & Wang, Qian. Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices. United States. doi:10.1021/acs.nanolett.9b01812.
Li, Xiaoyin, Zhang, Shunhong, Huang, Huaqing, Hu, Lin, Liu, Feng, and Wang, Qian. Tue . "Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices". United States. doi:10.1021/acs.nanolett.9b01812.
@article{osti_1609547,
title = {Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices},
author = {Li, Xiaoyin and Zhang, Shunhong and Huang, Huaqing and Hu, Lin and Liu, Feng and Wang, Qian},
abstractNote = {Not provided.},
doi = {10.1021/acs.nanolett.9b01812},
journal = {Nano Letters},
issn = {1530-6984},
number = 9,
volume = 19,
place = {United States},
year = {2019},
month = {8}
}