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Title: Low Current and Analog Memristor with Ru as Mobile Species

Abstract

The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 mu A), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Office of Basic Energy Sciences - Scientific User Facilities Division; Air Force Research Laboratory (AFRL) - Air Force Office of Scientific Research (AFOSR); National Research Foundation of Korea (NRF)
OSTI Identifier:
1605346
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 32; Journal Issue: 9
Country of Publication:
United States
Language:
English
Subject:
analog switching; electrochemical metallization; low current; memristors

Citation Formats

Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Xiangfei, and Yang, J. Joshua. Low Current and Analog Memristor with Ru as Mobile Species. United States: N. p., 2020. Web. doi:10.1002/adma.201904599.
Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Xiangfei, & Yang, J. Joshua. Low Current and Analog Memristor with Ru as Mobile Species. United States. doi:10.1002/adma.201904599.
Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Xiangfei, and Yang, J. Joshua. Thu . "Low Current and Analog Memristor with Ru as Mobile Species". United States. doi:10.1002/adma.201904599.
@article{osti_1605346,
title = {Low Current and Analog Memristor with Ru as Mobile Species},
author = {Yoon, Jung Ho and Zhang, Jiaming and Lin, Peng and Upadhyay, Navnidhi and Yan, Peng and Liu, Yuzi and Xia, Xiangfei and Yang, J. Joshua},
abstractNote = {The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 mu A), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.},
doi = {10.1002/adma.201904599},
journal = {Advanced Materials},
number = 9,
volume = 32,
place = {United States},
year = {2020},
month = {3}
}

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