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Title: Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Abstract

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr 4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T 1 times greater than 1 s at cryogenic temperatures (15 K) with a T 2 * = 317 ns and a T 2 = 81 μs, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr 4+ in SiC as an extrinsic, optically active spin qubit.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [1];  [3]; ORCiD logo [2]; ORCiD logo [2]
  1. Univ. of Chicago, IL (United States)
  2. Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1600463
Grant/Contract Number:  
AC02-06CH11357; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
npj Quantum Information
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2056-6387
Publisher:
Nature Partner Journals
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; Qubits; Semiconductors; Spintronics

Citation Formats

Diler, Berk, Whiteley, Samuel J., Anderson, Christopher P., Wolfowicz, Gary, Wesson, Marie E., Bielejec, Edward S., Heremans, F. Joseph, and Awschalom, David D. Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide. United States: N. p., 2020. Web. doi:10.1038/s41534-020-0247-7.
Diler, Berk, Whiteley, Samuel J., Anderson, Christopher P., Wolfowicz, Gary, Wesson, Marie E., Bielejec, Edward S., Heremans, F. Joseph, & Awschalom, David D. Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide. United States. doi:10.1038/s41534-020-0247-7.
Diler, Berk, Whiteley, Samuel J., Anderson, Christopher P., Wolfowicz, Gary, Wesson, Marie E., Bielejec, Edward S., Heremans, F. Joseph, and Awschalom, David D. Wed . "Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide". United States. doi:10.1038/s41534-020-0247-7. https://www.osti.gov/servlets/purl/1600463.
@article{osti_1600463,
title = {Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide},
author = {Diler, Berk and Whiteley, Samuel J. and Anderson, Christopher P. and Wolfowicz, Gary and Wesson, Marie E. and Bielejec, Edward S. and Heremans, F. Joseph and Awschalom, David D.},
abstractNote = {Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 °C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 s at cryogenic temperatures (15 K) with a T2* = 317 ns and a T2 = 81 μs, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.},
doi = {10.1038/s41534-020-0247-7},
journal = {npj Quantum Information},
issn = {2056-6387},
number = 1,
volume = 6,
place = {United States},
year = {2020},
month = {1}
}

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