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Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

Patent ·
OSTI ID:1600452
; ;
Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.
Research Organization:
MicroLink Devices, Inc., Niles, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000446
Assignee:
MicroLink Devices, Inc. (Niles, IL)
Patent Number(s):
10,522,363
Application Number:
16/044,479
OSTI ID:
1600452
Country of Publication:
United States
Language:
English

References (9)

SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES conference January 2005
Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching journal June 1999
Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching: Wafer-scale ELO of GaN using bandgap-selective wet etching journal April 2017
Sacrificial Structure for Effective Sapphire Substrate Liftoff Based on Photoelectrochemical Etching journal April 2015
High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography journal November 2016
A simple wet etch for GaN journal October 1999
Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off conference June 2016
Highly anisotropic photoenhanced wet etching of n-type GaN journal October 1997
Dopant-selective photoenhanced wet etching of GaN journal April 1998

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