Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- NA0003525
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Number(s):
- 10,516,068
- Application Number:
- 15/862,307
- OSTI ID:
- 1600434
- Resource Relation:
- Patent File Date: 01/04/2018
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stabilized thallium bromide radiation detectors and methods of making the same
Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof