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High current density, low contact resistance wide bandgap contacts

Patent ·
OSTI ID:1600393
; ; ;
A high current density, low contact resistance contact for wide bandgap (WBG) or ultra-wide bandgap materials (UWBG) is disclosed. The contact is lithographically formed so that a total perimeter length of the contact structure is at least twice the length of the side of a contact pad closest to the gate in a high electron mobility transistor (HEMT). The contact structure may take the form of a plurality of columns having various cross-sectional shapes, or may take the form of a convoluted geometrical shape, such as a comb-like, serpentine, or spiral shape. The depth of the contact structure permits direct contact with the two-dimensional electron gas (2DEG) in the HEMT by the perimeter of the contact structure. The contact structure is formed of at least one metal layer, at least one doped material regrown layer, or at least one implanted region. The contact structure may be applied to other WBG and UWBG devices.
Research Organization:
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
10,505,031
Application Number:
16/175,085
OSTI ID:
1600393
Country of Publication:
United States
Language:
English

References (7)

An AlN/Al 0.85 Ga 0.15 N high electron mobility transistor journal July 2016
Ultra-low resistive ohmic contacts on n-GaN using Si implantation journal January 1997
Low resistance ohmic contacts on wide band‐gap GaN journal February 1994
Ohmic contact formation mechanism of Ta∕Al∕Mo∕Au and Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN HEMTs
  • Mohammed, Fitih M.; Wang, Liang; Selvanathan, Deepak
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 6 https://doi.org/10.1116/1.2101691
journal January 2005
First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AlGaN∕GaN high electron mobility transistors
  • Mohammed, Fitih M.; Wang, Liang; Adesida, Ilesanmi
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 2 https://doi.org/10.1116/1.2437161
journal January 2007
Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching journal October 2009
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN journal November 2011

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36 MATERIALS SCIENCE