Ionic floating-gate memory device
Patent
·
OSTI ID:1600365
A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.
- Research Organization:
- National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Number(s):
- 10,497,866
- Application Number:
- 16/012,430
- OSTI ID:
- 1600365
- Country of Publication:
- United States
- Language:
- English
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