Resistive switching memory device
Patent
·
OSTI ID:1600306
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); The University of Chicago (Chicago, CA)
- Patent Number(s):
- 10,483,464
- Application Number:
- 15/994,589
- OSTI ID:
- 1600306
- Country of Publication:
- United States
- Language:
- English
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