Conductivity based on selective etch for GaN devices and applications thereof

Zhang, Yu; Sun, Qian; Han, Jung

Conductivity based on selective etch for GaN devices and applications thereof

Patent · 29 October 2019

OSTI ID:1600226

Zhang, Yu; Sun, Qian; Han, Jung

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

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Research Organization:: Yale University, New Haven, CT (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0001134; FC26-07NT43227; FG02-07ER46387

Assignee:: Yale University (New Haven, CT)

Patent Number(s):: 10,458,038

Application Number:: 14/929,015

OSTI ID:: 1600226

Country of Publication:: United States

Language:: English

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